High‐Performance Air‐Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics (Adv. Mater. 8/2026)
High-Performance Air-Stable Polymer Monolayer Transistors In their Research Article (DOI: 10.1002/adma.202515591), Mengmeng Li and co-workers demonstrate a fibrillar polymer monolayer with a self-confinement effect, where aligned chains parallel the nanofiber axis. Employing a top-gate CYTOP dielectric, this monolayer transistor achieves high mobility (7.12 cm2 V−1 s−1) and exceptional stability over 1260 days in air. Furthermore, monolithic 3D integration with n-type oxide transistors is achieved, enabling hybrid complementary inverters with reasonable voltage amplification capability.
Authors
- Changrui Liu (ORCID: https://orcid.org/0000-0003-0671-9545)
- Shuaidi Zhang
- Jintao Chu
- Menglin Cheng (ORCID: https://orcid.org/0009-0001-8484-4192)
- Yang Zhang (ORCID: https://orcid.org/0000-0003-3056-3069)
- Yanqin Zhang (ORCID: https://orcid.org/0000-0003-3397-7312)
- Yifan Xie (ORCID: https://orcid.org/0009-0003-1443-2437)
- Jinyao Wang
- Zilong Zheng
- Feng Zhang
- Haonan Wang
- Mengmeng Li
- Ling Li
Institutions
- Friedrich-Alexander-Universität Erlangen-Nürnberg (DE)
- Chinese Academy of Sciences (CN)
- Beijing University of Technology (CN)
- Institute of Microelectronics (CN)
- University of Chinese Academy of Sciences (CN)
- East China Normal University (CN)
- Beijing University of Chemical Technology (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Advanced Materials
- Published
- 2026-02-01
- DOI
- https://doi.org/10.1002/adma.72146
- Primary Topic
- Advanced Sensor and Energy Harvesting Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00