SEE and beam characterization with high-energy heavy ions at HIMAC
Single event effect cross sections and energy deposition events in silicon diodes were measured with high-energy heavy ions at HIMAC, in Japan, by varying LETs through PMMA degraders. Primary beam energies of 178 MeV/n <sup>132</sup>Xe and 320 MeV/n <sup>84</sup>Kr, measured at the device under test position, were employed. Results were compared to those from other heavy ion facilities, highlighting the importance of facility inter-comparisons. Considerations about single event upset cross sections, measured with and without the package and with fully fragmented beams, are outlined.
Authors
- Jean‐Luc Autran (ORCID: https://orcid.org/0000-0001-9893-014X)
- Matteo Cecchetto (ORCID: https://orcid.org/0000-0002-0557-4586)
- Satoshi Kodaira (ORCID: https://orcid.org/0000-0003-4216-6984)
- Natalia Emriskova
- R. García Alía
Institutions
- Centre National de la Recherche Scientifique (FR)
- Institut de Physique de Rennes (FR)
- National Institutes for Quantum Science and Technology (JP)
- Université de Rennes (FR)
- European Organization for Nuclear Research (CH)
Publication Details
- Published
- 2025-10-02
- DOI
- https://doi.org/10.1109/radecs66956.2025.11370336
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00