Thermal Management and Material Engineering of β-Ga ₂ O ₃ for High-Power Electronics: Challenges and Prospects

-Ga 2 O 3 has emerged as a key ultrawide bandgap semiconductor with exceptional breakdown strength and potential for low-cost, large-area crystal growth.These advantages have stimulated rapid progress in material synthesis, epitaxial techniques, and device fabrication for highpower applications.However, the intrinsically low thermal conductivity of -Ga 2 O 3 and the lack of techniques for reliable p-type doping present fundamental challenges that limit device efficiency and long-term reliability.This review consolidates the recent developments in the understanding of -Ga 2 O 3 , including its crystal and electronic structures, thermal properties, and the evolution of bulk and epitaxial growth methods.Particular attention is given to the mechanisms of heat generation and self-heating under high-power operation, as well as emerging thermal management strategies, such as heterogeneous substrate integration, substrate thinning, and device geometry optimization.These approaches demonstrate measurable improvements in heat dissipation yet remain constrained by intrinsic phonon transport characteristics.