Preparation and Transport Properties of Mn2.16Ga Single Crystal

In recent years, antiferromagnetic kagome materials have attracted considerable attention in condensed matter physics owing to their distinctive lattice geometry. In this work, high-quality single crystals of D019-structured Mn2.16Ga were grown using the flux method, and their magnetotransport properties were systematically studied. Measurements of magnetization versus field (M–H), temperature-dependent magnetization (M–T), and the anomalous Hall effect confirm that the crystal undergoes a magnetic-structural transition driven by both temperature and the magnetic field. Remarkably, a coexistence of positive and negative longitudinal magnetoresistance (MR) is observed in Mn2.16Ga. The MR shows a field-induced sign change from negative to positive. The negative MR is attributed to field-modified magnetic ordering, whereas the positive MR originates mainly from interlayer electron conduction in the kagome lattice and distortion of the in-plane triangular arrangement of Mn magnetic moments. These results offer valuable insights into the electronic and magnetic transport behavior of Mn-based antiferromagnetic single crystals.

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Publication Details

Journal
Nanomanufacturing
Published
2026-02-05
DOI
https://doi.org/10.3390/nanomanufacturing6010005
Primary Topic
Heusler alloys: electronic and magnetic properties
Type
article
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article

Preparation and Transport Properties of Mn2.16Ga Single Crystal

C. Liu, Wenchang Wu, Guangduo Lu, Lizhi Yi et al.
Nanomanufacturing
Heusler alloys: electronic and magnetic properties
article

Preparation and Transport Properties of Mn2.16Ga Single Crystal

C. Liu, Wenchang Wu, Guangduo Lu, Lizhi Yi, Xiong He, Yunli Xu, Yang Zou
article en

Abstract

In recent years, antiferromagnetic kagome materials have attracted considerable attention in condensed matter physics owing to their distinctive lattice geometry. In this work, high-quality single crystals of D019-structured Mn2.16Ga were grown using the flux method, and their magnetotransport properties were systematically studied. Measurements of magnetization versus field (M–H), temperature-dependent magnetization (M–T), and the anomalous Hall effect confirm that the crystal undergoes a magnetic-structural transition driven by both temperature and the magnetic field. Remarkably, a coexistence of positive and negative longitudinal magnetoresistance (MR) is observed in Mn2.16Ga. The MR shows a field-induced sign change from negative to positive. The negative MR is attributed to field-modified magnetic ordering, whereas the positive MR originates mainly from interlayer electron conduction in the kagome lattice and distortion of the in-plane triangular arrangement of Mn magnetic moments. These results offer valuable insights into the electronic and magnetic transport behavior of Mn-based antiferromagnetic single crystals.

NanomanufacturingVol. 6(1)
China Three Gorges University (CN)
Openalex Percentile: Top 65%
Heusler alloys: electronic and magnetic properties
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