Radiation-induced Luminescence of Eu-doped Ga2O3–SiO2 Glasses

In this study, Eu-doped (0.1, 0.3, 1.0, and 3.0%) Ga 2 O 3 -SiO 2 glasses were synthesized by the melt-quenching method using a floating zone furnace.The 0.1-1.0%Eu samples were partially crystallized glasses, which included the cristobalite phase, whereas the 3.0% Eu sample indicated only a halo pattern.All the samples showed the emission originating from divalent Eu ions at around 450 nm in photoluminescence and scintillation.Therefore, it was found that selfreduction occurred in all the samples.The full-energy peak under irradiation with -rays of 241 Am was observed in all the samples, and the 1.0% Eu sample showed the highest light yield of 100 photons/5.5MeV.