Impact of Heating/Cooling Rate on the Post-Annealing of LLZO thin films

This study reports the deposition of garnet structured lithium lanthanum zirconate (LLZO) thin films using radio frequency (RF) sputtering on glass substrates by varying heating/cooling rate. Deposition was carried out at a sputtering power of 70 W for 30 min. under Ar environment. As deposited films were annealed at 500°C at different heating/cooling rates (1.5, 6 and 12°C/min). It was observed that these films were amorphous in nature and no crystalline phase is reported despite the change in heating/cooling rates. Thickness and compositions of these films were estimated using Rutherford backscattering spectroscopic (RBS) measurements. Thicknesses of as deposited films was 110 nm and reduced to 90 nm on annealing at different heating/cooling rates suggesting intermixing at the interface. This intermixing phenomenon, observed at the interfaces of the LLZO thin film, suggests potential interactions or diffusion processes during the annealing process.

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Publication Details

Journal
Surface Review and Letters
Published
2026-02-06
DOI
https://doi.org/10.1142/s0218625x26500435
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
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article

Impact of Heating/Cooling Rate on the Post-Annealing of LLZO thin films

Hyun Joon Shin, Weon Cheol Lim, Sangsul Lee, So Young Kim et al.
Surface Review and Letters
Luminescence Properties of Advanced Materials
article

Impact of Heating/Cooling Rate on the Post-Annealing of LLZO thin films

Hyun Joon Shin, Weon Cheol Lim, Sangsul Lee, So Young Kim, Moditma, Jitendra Pal Singh, Keun Hwa Chae, Dr. Aditya Sharma, Anjali
article en

Abstract

This study reports the deposition of garnet structured lithium lanthanum zirconate (LLZO) thin films using radio frequency (RF) sputtering on glass substrates by varying heating/cooling rate. Deposition was carried out at a sputtering power of 70 W for 30 min. under Ar environment. As deposited films were annealed at 500°C at different heating/cooling rates (1.5, 6 and 12°C/min). It was observed that these films were amorphous in nature and no crystalline phase is reported despite the change in heating/cooling rates. Thickness and compositions of these films were estimated using Rutherford backscattering spectroscopic (RBS) measurements. Thicknesses of as deposited films was 110 nm and reduced to 90 nm on annealing at different heating/cooling rates suggesting intermixing at the interface. This intermixing phenomenon, observed at the interfaces of the LLZO thin film, suggests potential interactions or diffusion processes during the annealing process.

Surface Review and Letters
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Luminescence Properties of Advanced Materials
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