Field evaporation of germanium under THz pulses: application to atom probe tomography

This study investigates the field evaporation behavior of germanium (Ge) under monocycle terahertz (THz) excitation using atom probe tomography (APT). The influence of THz pulse polarity, specimen geometry, and spectral content is systematically examined. Dual-polarity experiments reveal the coexistence of two emission mechanisms: field-driven and thermally assisted. Delayed evaporation features are observed, and their dependence on specimen geometry is analyzed using a nanowire heat diffusion model. The spectral filtering of the THz radiation further confirms the role of the pulse spectral content in shaping the thermal response of Ge samples. These findings identify key parameters governing THz-assisted APT of low-conductivity materials and provide guidelines for optimizing experimental conditions.

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Publication Details

Journal
APL Materials
Published
2026-02-01
DOI
https://doi.org/10.1063/5.0306293
Primary Topic
Advanced Materials Characterization Techniques
Type
article
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article

Field evaporation of germanium under THz pulses: application to atom probe tomography

Matteo De Tullio, Jonathan Houard, Angela Vella, I. Blum et al.
APL Materials
Advanced Materials Characterization Techniques
article

Field evaporation of germanium under THz pulses: application to atom probe tomography

Matteo De Tullio, Jonathan Houard, Angela Vella, I. Blum, M. Karam
article en

Abstract

This study investigates the field evaporation behavior of germanium (Ge) under monocycle terahertz (THz) excitation using atom probe tomography (APT). The influence of THz pulse polarity, specimen geometry, and spectral content is systematically examined. Dual-polarity experiments reveal the coexistence of two emission mechanisms: field-driven and thermally assisted. Delayed evaporation features are observed, and their dependence on specimen geometry is analyzed using a nanowire heat diffusion model. The spectral filtering of the THz radiation further confirms the role of the pulse spectral content in shaping the thermal response of Ge samples. These findings identify key parameters governing THz-assisted APT of low-conductivity materials and provide guidelines for optimizing experimental conditions.

APL MaterialsVol. 14(2)
Centre National de la Recherche Scientifique (FR), Normandie Université (FR), Université de Rouen Normandie (FR), Institut National des Sciences Appliquées Rouen Normandie (FR)
Openalex Percentile: Top 66%
Advanced Materials Characterization Techniques
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