Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer (Adv. Mater. Technol. 3/2026)

Aluminum-Based Hybrid Resists The cover image illustrates an aluminum-based hybrid resist synthesized by molecular layer deposition and its representative molecular structure. Localized photochemical transformation induced by e-beam and/or EUV exposure leads to selective crosslinking and densification within the resist matrix, forming high-resolution nanopatterns with excellent etch resistance. These features are directly transferred into Si substrates, achieving ultra-high aspect ratio nanostructures for next-generation nanolithography. More details can be found in the Research Article by Jiyoung Kim, Chang-Yong Nam, and co-workers (10.1002/admt.202501639).