WO ₃ Nanocomposite Diode for Future Semiconductor Technologies

This study presents a novel WO 3 nanocomposite diode (p-Ag-WO 3 /n-WO[Formula: see text] fabricated using chemically synthesized n-WO 3 nanoparticles and p-Ag-WO 3 nanocomposite. The dip-coating technique was used to form a stable p–n junction. The detailed electrical analysis was performed, including I–V, C–V, and impedance analysis to explore its potential in various semiconductor technologies such as electronics, optoelectronics, and volatile memory. Results are promising, indicating its application as a rectifying diode with photodetection capabilities. The detailed current conduction mechanism provides support for its possible application in nonvolatile memory. In conclusion, this study highlights the versatility of WO 3 and its nanocomposites in next-generation semiconductor applications.