Phase-Coherent Transport in Two-Dimensional Tellurium Flakes

Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabrication and comprehensive quantum transport study of devices based on Te flakes with varying thicknesses. We demonstrate a hole mobility reaching up to 1000 cm<sup>2</sup>/V·s in a 17 nm thick flake at 30 K. At deep cryogenic temperatures (<50mK), the transport characteristics transition from Coulomb blockade in the low carrier density regime to pronounced Fabry-Pérot (F-P) interference at higher densities. Notably, the visibility of these F-P oscillations is significantly enhanced in the thinner flake device. The application of a magnetic field reveals a clear Zeeman splitting of the conductance peaks. The rich variety of quantum transport phenomena (Coulomb blockade, F-P interference, Zeeman splitting) observed underscores the high quality of our thin Te flakes and establishes them as a promising material for exploring physics and device concepts, such as topological superconductivity and low-power spintronic applications.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-02-04
DOI
https://doi.org/10.1021/acsaelm.5c01853
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Phase-Coherent Transport in Two-Dimensional Tellurium Flakes

Qiyuan He, D. V. Maheswar Repaka, Dharmraj Kotekar‐Patil, Mourad Benamara et al.
ACS Applied Electronic Materials
Topological Materials and Phenomena
article

Phase-Coherent Transport in Two-Dimensional Tellurium Flakes

Qiyuan He, D. V. Maheswar Repaka, Dharmraj Kotekar‐Patil, Mourad Benamara, Gokul Acharya, Hugh Churchill, Nathan Tanner Sawyers, Mohammad Hafijur Rahaman, Trudie Culverhouse
article en

Abstract

Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabrication and comprehensive quantum transport study of devices based on Te flakes with varying thicknesses. We demonstrate a hole mobility reaching up to 1000 cm<sup>2</sup>/V·s in a 17 nm thick flake at 30 K. At deep cryogenic temperatures (<50mK), the transport characteristics transition from Coulomb blockade in the low carrier density regime to pronounced Fabry-Pérot (F-P) interference at higher densities. Notably, the visibility of these F-P oscillations is significantly enhanced in the thinner flake device. The application of a magnetic field reveals a clear Zeeman splitting of the conductance peaks. The rich variety of quantum transport phenomena (Coulomb blockade, F-P interference, Zeeman splitting) observed underscores the high quality of our thin Te flakes and establishes them as a promising material for exploring physics and device concepts, such as topological superconductivity and low-power spintronic applications.

ACS Applied Electronic MaterialsVol. 8(4)
Agency for Science, Technology and Research (SG), City University of Hong Kong (HK), University of Manchester (GB), Nanchang Institute of Science & Technology (CN), Institute of Materials Research and Engineering (SG), Quantum Design (United States) (US), University of Arkansas at Fayetteville (US)
Openalex Percentile: Top 65%
Topological Materials and Phenomena
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