Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices

This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device shows best performance for both cases.

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Publication Details

Journal
Springer Link (Chiba Institute of Technology)
Published
2025-05-05
DOI
https://doi.org/10.1051/epjconf/202532501005/pdf
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices

Emona Datta, Sayan Paul, Arnab Basu
Springer Link (Chiba Institute of Technology)
Advancements in Semiconductor Devices and Circuit Design
article

Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices

Emona Datta, Sayan Paul, Arnab Basu
article en

Abstract

This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device shows best performance for both cases.

Springer Link (Chiba Institute of Technology)
Openalex Percentile: Top 37%
Advancements in Semiconductor Devices and Circuit Design
DOISourceOpenAlex
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Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices — Emona Datta, Sayan Paul, et al. · Springer Link (Chiba Institute of Technology) (2025) | TGRS Research Map | TGRS