A 11.3‐ to 19.4‐GHz Wideband CMOS LNA Employing a Triple‐Coupled Transformer for Upper‐Mid Band Applications

ABSTRACT A wideband CMOS low‐noise amplifier (LNA) for 6G upper‐mid band (7–24 GHz) applications is presented. The LNA introduces a novel interstage matching network synthesized from first principles as a fourth‐order bandpass filter to achieve a broad, flat gain response. This filter is realized using a compact triple‐coupled transformer (TCT), which simultaneously provides intrinsic gm‐boosting through a negative feedback path without additional power consumption. The TCT's architecture is systematically designed to create a dual‐resonant characteristic, effectively extending the bandwidth while maintaining high gain. Fabricated in 65‐nm CMOS, the LNA occupies a core area of 0.21 mm 2 . Measurement results show a 3‐dB bandwidth from 11.3 to 19.4 GHz, a peak gain of 10.5 dB, and a noise figure of 1.8–3.8 dB, while consuming only 7.9 mW from a 1‐V supply.

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Publication Details

Journal
International Journal of Circuit Theory and Applications
Published
2026-02-01
DOI
https://doi.org/10.1002/cta.70350
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A 11.3‐ to 19.4‐GHz Wideband CMOS LNA Employing a Triple‐Coupled Transformer for Upper‐Mid Band Applications

Yeonsoo Kim, Juntaek Oh, Sun K. Hong, Namkyung Lee et al.
International Journal of Circuit Theory and Applications
Radio Frequency Integrated Circuit Design
article

A 11.3‐ to 19.4‐GHz Wideband CMOS LNA Employing a Triple‐Coupled Transformer for Upper‐Mid Band Applications

Yeonsoo Kim, Juntaek Oh, Sun K. Hong, Namkyung Lee, Do Hyeon Kim
article en

Abstract

ABSTRACT A wideband CMOS low‐noise amplifier (LNA) for 6G upper‐mid band (7–24 GHz) applications is presented. The LNA introduces a novel interstage matching network synthesized from first principles as a fourth‐order bandpass filter to achieve a broad, flat gain response. This filter is realized using a compact triple‐coupled transformer (TCT), which simultaneously provides intrinsic gm‐boosting through a negative feedback path without additional power consumption. The TCT's architecture is systematically designed to create a dual‐resonant characteristic, effectively extending the bandwidth while maintaining high gain. Fabricated in 65‐nm CMOS, the LNA occupies a core area of 0.21 mm 2 . Measurement results show a 3‐dB bandwidth from 11.3 to 19.4 GHz, a peak gain of 10.5 dB, and a noise figure of 1.8–3.8 dB, while consuming only 7.9 mW from a 1‐V supply.

International Journal of Circuit Theory and Applications
Soongsil University (KR)
National Research Foundation, National Research Foundation of Korea, IC Design Education Center, Ministry of Science and ICT, South Korea
Affordable and clean energy
Openalex Percentile: Top 70%
Radio Frequency Integrated Circuit Design
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A 11.3‐ to 19.4‐GHz Wideband CMOS LNA Employing a Triple‐Coupled Transformer for Upper‐Mid Band Applications — Yeonsoo Kim, Juntaek Oh, et al. · International Journal of Circuit Theory and Applications (2026) | TGRS Research Map | TGRS