Chip‐Scale Graphene/IGZO Cold Source FET Array Enabling Sub‐60 mV dec <sup>−1</sup> Super‐Steep Subthreshold Swing (Adv. Mater. 7/2026)
Super-Steep Subthreshold Swing In their Research Article (DOI: 10.1002/adma.202510618), Woojin Park, Yonghun Kim, Byungjin Cho, and co-workers demonstrate super-steep subthreshold swing (SS) below 60 mV dec−1 in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppress the Boltzmann thermal tail, while high-k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is achieved in the array, enabling ultralow-power, high-speed electronics.
Authors
- Kyungrok Kang
- Woojin Park (ORCID: https://orcid.org/0009-0005-8508-4833)
- Y. K Kim
- Eunjeong Cho
- S. K. OH
- Wondeok Seo
- B. S. Cho
- Min Jeong Kim (ORCID: https://orcid.org/0000-0003-3778-6732)
- Yung Joon Jung
- Jongwon YOON
- Shinhoi Kim
- Ojun Kwon
- Minhee Kim
- Yeongeun Kwon
Institutions
- Northeastern University (US)
- Chungbuk National University (KR)
- Samsung (South Korea) (KR)
- Korea Institute of Materials Science (KR)
- Chungbuk National University Hospital (KR)
Publication Details
- Journal
- Advanced Materials
- Published
- 2026-02-01
- DOI
- https://doi.org/10.1002/adma.72129
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00