Characterization of TiO2 layer ALD deposited onto porous 4H-SiC fabricated by Electrochemical Etching

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SPIRE - Sciences Po Institutional REpository
Published
2025-06-02
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
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article

Characterization of TiO2 layer ALD deposited onto porous 4H-SiC fabricated by Electrochemical Etching

Vanessa Spanò, M.L. Barcellona, Maria Elena Fragalà, Brice Le Borgne et al.
SPIRE - Sciences Po Institutional REpository
Silicon Carbide Semiconductor Technologies
article

Characterization of TiO2 layer ALD deposited onto porous 4H-SiC fabricated by Electrochemical Etching

Vanessa Spanò, M.L. Barcellona, Maria Elena Fragalà, Brice Le Borgne, Gaël Gautier, Thomas Defforge
article en

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No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
University of Catania (IT), Thion Medical (France) (FR)
Openalex Percentile: Top 37%
Silicon Carbide Semiconductor Technologies
OpenAlex
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Characterization of TiO2 layer ALD deposited onto porous 4H-SiC fabricated by Electrochemical Etching — Vanessa Spanò, M.L. Barcellona, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS