Synergistic Cu Doping and Yb Alloying Enhance Thermoelectric Performance of p-Type Mg <sub>1.8</sub> Zn <sub>1.2</sub> Sb <sub>2</sub> -Based Material toward High-Efficiency All-Mg <sub>3</sub> Sb <sub>2</sub> Devices

<i>AB</i><sub>2</sub>Sb<sub>2</sub>-type Zintl phases, particularly Mg<sub>3</sub>Sb<sub>2</sub>-based materials, have recently garnered significant attention owing to their earth-abundant, nontoxic constituents and excellent <i>n</i>-type thermoelectric (TE) performance in the medium temperature range. However, achieving high-performance all Mg<sub>3</sub>Sb<sub>2</sub>-based TE devices remains difficult due to the lack of a compatible and efficient <i>p</i>-type counterpart. Herein, a combined approach of Cu doping and Yb alloying is employed to synergistically optimize the carrier concentration, carrier mobility, and reduce lattice thermal conductivity, thereby achieving a high-performance <i>p</i>-type Mg<sub>3</sub>Sb<sub>2</sub> TE material. Consequently, a high <i>zT</i> value of 0.95 is obtained for the optimized composition Mg<sub>1.18</sub>Cu<sub>0.02</sub>Zn<sub>1.2</sub>Yb<sub>0.6</sub>Sb<sub>2</sub> at 673 K. To demonstrate practical applicability, a fully compatible Mg<sub>3</sub>Sb<sub>2</sub>-based TE device is fabricated using cupronickel as a common diffusion barrier for both <i>p-</i> and <i>n</i>-type legs, ensuring excellent interfacial stability and device reliability. A crack-free interface with a specific contact resistivity of ρ<sub>c</sub> ∼ 2.76 μΩcm<sup>2</sup> is achieved. The single-leg p-type device exhibited a maximum efficiency, η<sub>max</sub> ∼ 5.5%, while for a two-pair TE device, η<sub>max</sub> ∼ 9.2% at a temperature difference (Δ<i>T</i>) of 374 K is realized. These findings demonstrate the potential of compositional engineering for developing efficient <i>p</i>-type Mg<sub>3</sub>Sb<sub>2</sub> materials and fully integrated TE devices for waste heat recovery.

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Journal
ACS Applied Materials & Interfaces
Published
2026-01-30
DOI
https://doi.org/10.1021/acsami.5c22459
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
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article

Synergistic Cu Doping and Yb Alloying Enhance Thermoelectric Performance of p-Type Mg 1.8 Zn 1.2 Sb 2 -Based Material toward High-Efficiency All-Mg 3 Sb 2 Devices

Krushna Kumari Raut, Raju Chetty, Vikrant Trivedi, Jayachandran Babu et al.
ACS Applied Materials & Interfaces
Advanced Thermoelectric Materials and Devices
article

Synergistic Cu Doping and Yb Alloying Enhance Thermoelectric Performance of p-Type Mg 1.8 Zn 1.2 Sb 2 -Based Material toward High-Efficiency All-Mg 3 Sb 2 Devices

Krushna Kumari Raut, Raju Chetty, Vikrant Trivedi, Jayachandran Babu, Toshiki Mori, Andrei Novitskii
article en

Abstract

<i>AB</i><sub>2</sub>Sb<sub>2</sub>-type Zintl phases, particularly Mg<sub>3</sub>Sb<sub>2</sub>-based materials, have recently garnered significant attention owing to their earth-abundant, nontoxic constituents and excellent <i>n</i>-type thermoelectric (TE) performance in the medium temperature range. However, achieving high-performance all Mg<sub>3</sub>Sb<sub>2</sub>-based TE devices remains difficult due to the lack of a compatible and efficient <i>p</i>-type counterpart. Herein, a combined approach of Cu doping and Yb alloying is employed to synergistically optimize the carrier concentration, carrier mobility, and reduce lattice thermal conductivity, thereby achieving a high-performance <i>p</i>-type Mg<sub>3</sub>Sb<sub>2</sub> TE material. Consequently, a high <i>zT</i> value of 0.95 is obtained for the optimized composition Mg<sub>1.18</sub>Cu<sub>0.02</sub>Zn<sub>1.2</sub>Yb<sub>0.6</sub>Sb<sub>2</sub> at 673 K. To demonstrate practical applicability, a fully compatible Mg<sub>3</sub>Sb<sub>2</sub>-based TE device is fabricated using cupronickel as a common diffusion barrier for both <i>p-</i> and <i>n</i>-type legs, ensuring excellent interfacial stability and device reliability. A crack-free interface with a specific contact resistivity of ρ<sub>c</sub> ∼ 2.76 μΩcm<sup>2</sup> is achieved. The single-leg p-type device exhibited a maximum efficiency, η<sub>max</sub> ∼ 5.5%, while for a two-pair TE device, η<sub>max</sub> ∼ 9.2% at a temperature difference (Δ<i>T</i>) of 374 K is realized. These findings demonstrate the potential of compositional engineering for developing efficient <i>p</i>-type Mg<sub>3</sub>Sb<sub>2</sub> materials and fully integrated TE devices for waste heat recovery.

ACS Applied Materials & InterfacesVol. 18(7)
University of Tsukuba (JP), National Institute for Materials Science (JP)
Ministry of Education, Culture, Sports, Science and Technology, University of Tsukuba, National Institute for Materials Science, JST-Mirai Program
Openalex Percentile: Top 72%
Advanced Thermoelectric Materials and Devices
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