Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies

This work demonstrates key solutions for the ultimate cointegration of SiGe HBT, PDSOI switches and high-quality passives with 3D sequential integration. A Local Trap Rich (LTR) with RF isolation comparable to the state-of the-art TR substrate, and a bulk SiGe HBT withstanding the top tier thermal budget are shown. A high-performance RFSOI switch processed at 600°C featuring R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>×C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>=96fs & RF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vmax</inf>=2.7V is also demonstrated, which is a major breakthrough. Together, these results pave the way towards a fully monolithic Silicon Front-End Module (FEM) for advanced efficient and cost-effective RF systems.

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Published
2025-12-06
DOI
https://doi.org/10.1109/iedm50572.2025.11353843
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
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article
Field-Weighted Citation Impact
0.73
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Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies

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Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies

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article en
1 citations

Abstract

This work demonstrates key solutions for the ultimate cointegration of SiGe HBT, PDSOI switches and high-quality passives with 3D sequential integration. A Local Trap Rich (LTR) with RF isolation comparable to the state-of the-art TR substrate, and a bulk SiGe HBT withstanding the top tier thermal budget are shown. A high-performance RFSOI switch processed at 600°C featuring R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>×C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>=96fs & RF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vmax</inf>=2.7V is also demonstrated, which is a major breakthrough. Together, these results pave the way towards a fully monolithic Silicon Front-End Module (FEM) for advanced efficient and cost-effective RF systems.

Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), STMicroelectronics (France) (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR)
Industry, innovation and infrastructure
Openalex Percentile: Top 20%
Radio Frequency Integrated Circuit Design
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