The Growth Mechanism of Porous Silicon Carbide Coatings by Chemical Vapor Deposition

ABSTRACT Porous silicon carbide (SiC) materials hold significant promise for applications in photocatalysis and photoelectrocatalysis due to their large active area and excellent photoelectronic properties. However, the main challenge of porous SiC‐based catalysts is the unclear growth mechanism governing porous SiC formation via chemical vapor deposition (CVD), resulting in difficulty in the precise control of pore size. In this study, porous SiC coating on graphite substrate was synthesized by hot‐wall CVD through process parameter modulation. The characterization results demonstrate that the coating exhibits a porosity of 40.3%, with a corresponding average pore size of 2.85 µm. The growth mechanism of porous SiC coatings mainly includes the competitive growth of the 4H‐SiC and the rapid growth along prismatic planes of 4H‐SiC hexagonal grains. This work enriches the theoretical understanding of SiC competitive growth for 3C‐ and 4H‐SiC and provides substantial support for the porous SiC applied in catalysis and related fields.