Processing Characteristics of Ultra-Precision Cutting of 4H-SiC Wafers by Dicing Blade

Dicing is an important process in the packaging segment of the semiconductor manufacturing process, and due to the high hardness and brittleness of 4H-SiC wafers, they are prone to crack propagation and severe chipping during the dicing process. To reduce chipping defects, this study investigates the effects of key process parameters on the chipping behavior of 4H-SiC wafers, as well as the associated chipping formation and material removal mechanisms during dicing. Firstly, a spindle current measurement scheme was designed to indirectly reflect changes in grinding force during the cutting process, and the change in the cutting process in a single pass was analyzed. Secondly, experiments controlling single-factor variables were designed to explore the influence of laws of process parameters, including depth of cut, spindle speed, feed speed, and the dicing blade parameter, abrasive grain size, on the quality of chipping, and the optimal process parameters were obtained. Thirdly, the morphology of the 4H-SiC cutting contact arc area, front-back chipping, and sidewalls was analyzed in order to investigate the chipping formation and material removal mechanism. This study contributes to a fundamental understanding of material removal mechanisms during the cutting of 4H-SiC wafers and other advanced semiconductor materials and provides guidance for optimizing cutting process parameters.