Achieving <i>zT</i> ≥ 1.0 in a Cd <sub>3</sub> P <sub>2</sub> -Based System via Alloying Minor Arsenic
In this work, we report the enhanced thermoelectric performance of the Cd<sub>3</sub>P<sub>2</sub> system achieved through alloying minor arsenic. The Cd<sub>3</sub>P<sub>2</sub>-based material (Cd<sub>3</sub>P<sub>1.8</sub>As<sub>0.2</sub>) achieves a peak <i>zT</i> exceeding 1.0 and an average <i>zT</i> of 0.59, comprehensively surpassing the performance of the pristine Cd<sub>3</sub>P<sub>2</sub> compound. Such enhanced performance is attributed to the partial decoupling between electrical and thermal transport, where the reduced effective mass enhances carrier mobility, while As-induced defect scattering and increased lattice anharmonicity effectively suppress the lattice thermal conductivity. Theoretical analysis suggests further potential for improvement, thereby expanding the application prospects of this system.
Authors
- Meng Tian (ORCID: https://orcid.org/0000-0001-7259-0730)
- Siwen Zhang
- Xu Lu (ORCID: https://orcid.org/0000-0002-6460-4204)
- Sikang Zheng
- Xiaoyuan Zhou
- Zhanchang Gu
- Guoyu Wang
- Pengfei Gao
- Qihong Xiong
Institutions
- Chongqing University (CN)
- Nanjing University of Science and Technology (CN)
- Quantum Devices (United States) (US)
- Division of Materials Science and Engineering (AU)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-01-30
- DOI
- https://doi.org/10.1021/acsami.5c23517
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00