Defect Passivation and Enhanced Hole Extraction in Inverted Perovskite Solar Cells via CeO2@MoS2 Interfacial Engineering

Nanomaterial-based hole transport layers (HTLs) play a vital role in regulating interfacial charge extraction and recombination in perovskite solar cells (PSCs). To improve PSC efficiency, hydrothermally synthesized CeO<sub>2</sub>@MoS<sub>2</sub> nanocomposites (CM NCs) were incorporated as an interfacial buffer layer into a NiO<sub>X</sub>/MeO-2PACz HTL. The introduction of CM NCs induces strong interfacial interactions, where Mo sites in MoS<sub>2</sub> interact with NiO<sub>X,</sub> modulating the Ni<sup>2+</sup>/Ni<sup>3+</sup> ratio and reducing the interfacial trap density. Moreover, CeO<sub>2</sub> promotes the formation of oxygen vacancies, collectively improving the conductivity and hole transport capability of the NiO<sub>X</sub> HTL. The MoS<sub>2</sub>-grafted CeO<sub>2</sub> interlayer effectively tailors the interfacial energetics and creates an effective channel for hole transfer, thereby reducing open-circuit voltage (V<sub>OC</sub>) loss and enhancing device performance. This interface modification efficiently enhances hole extraction, and non-radiative recombination is effectively suppressed at the NiO<sub>X</sub>/MeO-2PACz/perovskite interface. Thereby, incorporating 2 vol% CM NCs into PSCs achieved a power conversion efficiency (PCE) of 17.93%, compared to 17.50% for a 1 vol% CM NCs-based device and 17.01% for the unmodified control device. The enhanced performance at the optimized CM NCs concentration is attributed to effective defect passivation, reduced V<sub>OC</sub> loss, and improved interfacial band alignment, which together facilitate hole extraction and suppress non-radiative recombination. However, excessive CM NCs incorporation (4 vol%) leads to increased interfacial resistance, partial hole blocking effects associated with the n-type nature of CeO<sub>2</sub>, and aggravated recombination, resulting in degraded device performance. These results demonstrate that precise control over CM NCs interlayer thickness and concentration is critical for maximizing device performance, providing a robust strategy for designing high-efficiency and stable NiO<sub>X</sub>-based PSCs and advancing nanocomposite-enabled interfacial engineering for photovoltaic applications.

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Journal
Nanomaterials
Published
2026-01-30
DOI
https://doi.org/10.3390/nano16030188
Primary Topic
Perovskite Materials and Applications
Type
article
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article

Defect Passivation and Enhanced Hole Extraction in Inverted Perovskite Solar Cells via CeO2@MoS2 Interfacial Engineering

Pradeep Kumar, Yun-Ming Sung, Hou-Chin Cha, Kuen-Lin Chen et al.
Nanomaterials
Perovskite Materials and Applications
article

Defect Passivation and Enhanced Hole Extraction in Inverted Perovskite Solar Cells via CeO2@MoS2 Interfacial Engineering

Pradeep Kumar, Yun-Ming Sung, Hou-Chin Cha, Kuen-Lin Chen, Yu-Ching Huang, Chia-Feng Li
article en

Abstract

Nanomaterial-based hole transport layers (HTLs) play a vital role in regulating interfacial charge extraction and recombination in perovskite solar cells (PSCs). To improve PSC efficiency, hydrothermally synthesized CeO<sub>2</sub>@MoS<sub>2</sub> nanocomposites (CM NCs) were incorporated as an interfacial buffer layer into a NiO<sub>X</sub>/MeO-2PACz HTL. The introduction of CM NCs induces strong interfacial interactions, where Mo sites in MoS<sub>2</sub> interact with NiO<sub>X,</sub> modulating the Ni<sup>2+</sup>/Ni<sup>3+</sup> ratio and reducing the interfacial trap density. Moreover, CeO<sub>2</sub> promotes the formation of oxygen vacancies, collectively improving the conductivity and hole transport capability of the NiO<sub>X</sub> HTL. The MoS<sub>2</sub>-grafted CeO<sub>2</sub> interlayer effectively tailors the interfacial energetics and creates an effective channel for hole transfer, thereby reducing open-circuit voltage (V<sub>OC</sub>) loss and enhancing device performance. This interface modification efficiently enhances hole extraction, and non-radiative recombination is effectively suppressed at the NiO<sub>X</sub>/MeO-2PACz/perovskite interface. Thereby, incorporating 2 vol% CM NCs into PSCs achieved a power conversion efficiency (PCE) of 17.93%, compared to 17.50% for a 1 vol% CM NCs-based device and 17.01% for the unmodified control device. The enhanced performance at the optimized CM NCs concentration is attributed to effective defect passivation, reduced V<sub>OC</sub> loss, and improved interfacial band alignment, which together facilitate hole extraction and suppress non-radiative recombination. However, excessive CM NCs incorporation (4 vol%) leads to increased interfacial resistance, partial hole blocking effects associated with the n-type nature of CeO<sub>2</sub>, and aggravated recombination, resulting in degraded device performance. These results demonstrate that precise control over CM NCs interlayer thickness and concentration is critical for maximizing device performance, providing a robust strategy for designing high-efficiency and stable NiO<sub>X</sub>-based PSCs and advancing nanocomposite-enabled interfacial engineering for photovoltaic applications.

NanomaterialsVol. 16(3)
Ming Chi University of Technology (TW), National Chung Hsing University (TW), National Taiwan University (TW)
Affordable and clean energy
Openalex Percentile: Top 72%
Perovskite Materials and Applications
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