All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

All-optical in-memory computing is emerging as a critical technology for next-generation energy-efficient and high-speed information processing because it avoids frequent optical-electrical-optical conversions and integrates sensing, processing, and memory within a single device. Here, we report the demonstration of bidirectional polarization switching in a van der Waals heterostructure composed of ferroelectric CuInP<sub>2</sub>S<sub>6</sub> (CIPS) and semiconducting MoS<sub>2</sub>. Wavelength-tunable excitation (660-405 nm) enables robust, bidirectional polarization reversal through the interaction between the photogenerated charges in MoS<sub>2</sub>/CIPS heterostructure and ferroelectric polarization charges in CIPS. Two wavelength-dependent carrier dynamic mechanisms were established specifically for excitations below and above the CIPS bandgap. These mechanisms result in opposite charge accumulation at the interface, leading to opposite polarization switching directions. The device demonstrates high-performance all-optical nonvolatile memory. Furthermore, it emulates all-optical controlled retina-like synaptic plasticity, including paired-pulse facilitation/inhibition, short-term and long-term potentiation and depression, and learning-forgetting behaviours, with wavelength-selective long-term potentiation and depression enabling neuromorphic image recognition. Additionally, the single device implements reconfigurable all-optical controlled Boolean logic gates.

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Publication Details

Journal
Advanced Science
Published
2026-01-29
DOI
https://doi.org/10.1002/advs.202522092
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Y. J. Lee, Jiahui Lyu, Jingjie Niu, S. W. Lee et al.
Advanced Science
2D Materials and Applications
article

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Y. J. Lee, Jiahui Lyu, Jingjie Niu, S. W. Lee, Cheolhwa Jang, Ji‐Sang Park, Jie Li
article en

Abstract

All-optical in-memory computing is emerging as a critical technology for next-generation energy-efficient and high-speed information processing because it avoids frequent optical-electrical-optical conversions and integrates sensing, processing, and memory within a single device. Here, we report the demonstration of bidirectional polarization switching in a van der Waals heterostructure composed of ferroelectric CuInP<sub>2</sub>S<sub>6</sub> (CIPS) and semiconducting MoS<sub>2</sub>. Wavelength-tunable excitation (660-405 nm) enables robust, bidirectional polarization reversal through the interaction between the photogenerated charges in MoS<sub>2</sub>/CIPS heterostructure and ferroelectric polarization charges in CIPS. Two wavelength-dependent carrier dynamic mechanisms were established specifically for excitations below and above the CIPS bandgap. These mechanisms result in opposite charge accumulation at the interface, leading to opposite polarization switching directions. The device demonstrates high-performance all-optical nonvolatile memory. Furthermore, it emulates all-optical controlled retina-like synaptic plasticity, including paired-pulse facilitation/inhibition, short-term and long-term potentiation and depression, and learning-forgetting behaviours, with wavelength-selective long-term potentiation and depression enabling neuromorphic image recognition. Additionally, the single device implements reconfigurable all-optical controlled Boolean logic gates.

Advanced Science
Imec the Netherlands (NL), Sungkyunkwan University (KR)
National Research Foundation, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, Samsung
Affordable and clean energy
Openalex Percentile: Top 74%
2D Materials and Applications
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