Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications

In this article, we designed and analyzed a Vertically Stacked Gate All Around Dielectric Modulated Nano Sheet Field Effect Transistor (DM-NSFET) based biosensor through TCAD simulations. The DM-NSFET is designed for detection of Cancer biomolecules like SW 620, HEK293, and other biomolecules like DNA, gelatin. This functionality comes out through the modulation of its electrical properties by incorporating cavity all around at two sides of dielectric material (HfO₂) under the gate electrode to allow biomolecules. The proposed device contains gate all around to increase the sensitivity of device. The sensitivity variation of biosensors is analyzed in terms of subthreshold swing (SS), Selectivity and response time (τ). Further, the effect of filling positions on sensitivity is examined under different cases, this biosensor sensitivity mainly depends on number of biomolecules filling rather than the specific filling position. The obtained results indicates that the proposed device is reaches its current sensitivity of 3.1 × 10³, subthreshold swing (SS) of 27.72 mV/dec. The proposed device exhibits significantly enhanced sensitivity compared to existing biosensors and therefore, this biosensor is highly suitable for diagnosis of Cancer Biomolecule.