Machine learning-based interatomic potential development and phase transition analysis of ferroelectric hafnium dioxide

The ferroelectric phase ( <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mrow> <a:mi>P</a:mi> <a:mi>c</a:mi> <a:mi>a</a:mi> <a:msub> <a:mn>2</a:mn> <a:mn>1</a:mn> </a:msub> </a:mrow> </a:math> , which is in orthorhombic symmetry) of hafnium dioxide <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"> <b:mo>(</b:mo> <b:msub> <b:mi>HfO</b:mi> <b:mn>2</b:mn> </b:msub> <b:mo>)</b:mo> </b:math> has gained much attention due to its potential applications in nanoelectronics and advanced memory devices. However, its complex phase behavior under external stimuli, such as pressure and temperature, remains a subject of intense investigation. This study focuses on developing a machine learning-based interatomic potential (MLIP) that is trained with data from density-functional theory (DFT) calculations to simulate phase transitions and mechanical properties of <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"> <c:msub> <c:mi>HfO</c:mi> <c:mn>2</c:mn> </c:msub> </c:math> . The developed MLIP predicts lattice parameters, equations of state, bulk and shear moduli, and elastic constants that closely align with DFT predictions for several phases and at various pressures. Once validated, the MLIP is used to investigate the phase transitions of ferroelectric <d:math xmlns:d="http://www.w3.org/1998/Math/MathML"> <d:msub> <d:mi>HfO</d:mi> <d:mn>2</d:mn> </d:msub> </d:math> <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"> <e:mrow> <e:mo>(</e:mo> <e:mi>P</e:mi> <e:mi>c</e:mi> <e:mi>a</e:mi> <e:msub> <e:mn>2</e:mn> <e:mn>1</e:mn> </e:msub> <e:mo>)</e:mo> </e:mrow> </e:math> under both isobaric and constant stress conditions at elevated temperatures ranging from 200 to 2500 K. We used several complementary methods, including local symmetry identification, radial distribution function, and x-ray diffraction characterization, to identify interesting phase transitions among several competitive hafnia phases predicted from our simulations. The suggested methods uniformly reveal that under pure deviatoric condition, the system favors a transition from the orthorhombic <f:math xmlns:f="http://www.w3.org/1998/Math/MathML"> <f:mrow> <f:mi>P</f:mi> <f:mi>c</f:mi> <f:mi>a</f:mi> <f:msub> <f:mn>2</f:mn> <f:mn>1</f:mn> </f:msub> </f:mrow> </f:math> phase to a tetragonal ( <g:math xmlns:g="http://www.w3.org/1998/Math/MathML"> <g:mrow> <g:mi>P</g:mi> <g:msub> <g:mn>4</g:mn> <g:mn>2</g:mn> </g:msub> <g:mo>/</g:mo> <g:mi>n</g:mi> <g:mi>m</g:mi> <g:mi>c</g:mi> </g:mrow> </g:math> ) phase, whereas a zero stress condition drives the system from the <h:math xmlns:h="http://www.w3.org/1998/Math/MathML"> <h:mrow> <h:mi>P</h:mi> <h:mi>c</h:mi> <h:mi>a</h:mi> <h:msub> <h:mn>2</h:mn> <h:mn>1</h:mn> </h:msub> </h:mrow> </h:math> phase to another orthorhombic <i:math xmlns:i="http://www.w3.org/1998/Math/MathML"> <i:mrow> <i:mo>(</i:mo> <i:mi>P</i:mi> <i:mi>b</i:mi> <i:mi>c</i:mi> <i:mi>n</i:mi> <i:mo>)</i:mo> </i:mrow> </i:math> phase. These findings provide crucial insights into stress and temperature-induced phase behavior of hafnia, guiding future experimental and theoretical studies for optimizing hafnia-based ferroelectric devices.

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Journal
Physical Review Materials
Published
2026-01-29
DOI
https://doi.org/10.1103/gkvf-t1vl
Primary Topic
Ferroelectric and Negative Capacitance Devices
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article
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article

Machine learning-based interatomic potential development and phase transition analysis of ferroelectric hafnium dioxide

Niaz Abdolrahim, Sobhit Singh, Yufeng Xi, Shuai Zhang et al.
Physical Review Materials
Ferroelectric and Negative Capacitance Devices
article

Machine learning-based interatomic potential development and phase transition analysis of ferroelectric hafnium dioxide

Niaz Abdolrahim, Sobhit Singh, Yufeng Xi, Shuai Zhang, Yasantha Hetti Kankanamalage
article en

Abstract

The ferroelectric phase ( <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mrow> <a:mi>P</a:mi> <a:mi>c</a:mi> <a:mi>a</a:mi> <a:msub> <a:mn>2</a:mn> <a:mn>1</a:mn> </a:msub> </a:mrow> </a:math> , which is in orthorhombic symmetry) of hafnium dioxide <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"> <b:mo>(</b:mo> <b:msub> <b:mi>HfO</b:mi> <b:mn>2</b:mn> </b:msub> <b:mo>)</b:mo> </b:math> has gained much attention due to its potential applications in nanoelectronics and advanced memory devices. However, its complex phase behavior under external stimuli, such as pressure and temperature, remains a subject of intense investigation. This study focuses on developing a machine learning-based interatomic potential (MLIP) that is trained with data from density-functional theory (DFT) calculations to simulate phase transitions and mechanical properties of <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"> <c:msub> <c:mi>HfO</c:mi> <c:mn>2</c:mn> </c:msub> </c:math> . The developed MLIP predicts lattice parameters, equations of state, bulk and shear moduli, and elastic constants that closely align with DFT predictions for several phases and at various pressures. Once validated, the MLIP is used to investigate the phase transitions of ferroelectric <d:math xmlns:d="http://www.w3.org/1998/Math/MathML"> <d:msub> <d:mi>HfO</d:mi> <d:mn>2</d:mn> </d:msub> </d:math> <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"> <e:mrow> <e:mo>(</e:mo> <e:mi>P</e:mi> <e:mi>c</e:mi> <e:mi>a</e:mi> <e:msub> <e:mn>2</e:mn> <e:mn>1</e:mn> </e:msub> <e:mo>)</e:mo> </e:mrow> </e:math> under both isobaric and constant stress conditions at elevated temperatures ranging from 200 to 2500 K. We used several complementary methods, including local symmetry identification, radial distribution function, and x-ray diffraction characterization, to identify interesting phase transitions among several competitive hafnia phases predicted from our simulations. The suggested methods uniformly reveal that under pure deviatoric condition, the system favors a transition from the orthorhombic <f:math xmlns:f="http://www.w3.org/1998/Math/MathML"> <f:mrow> <f:mi>P</f:mi> <f:mi>c</f:mi> <f:mi>a</f:mi> <f:msub> <f:mn>2</f:mn> <f:mn>1</f:mn> </f:msub> </f:mrow> </f:math> phase to a tetragonal ( <g:math xmlns:g="http://www.w3.org/1998/Math/MathML"> <g:mrow> <g:mi>P</g:mi> <g:msub> <g:mn>4</g:mn> <g:mn>2</g:mn> </g:msub> <g:mo>/</g:mo> <g:mi>n</g:mi> <g:mi>m</g:mi> <g:mi>c</g:mi> </g:mrow> </g:math> ) phase, whereas a zero stress condition drives the system from the <h:math xmlns:h="http://www.w3.org/1998/Math/MathML"> <h:mrow> <h:mi>P</h:mi> <h:mi>c</h:mi> <h:mi>a</h:mi> <h:msub> <h:mn>2</h:mn> <h:mn>1</h:mn> </h:msub> </h:mrow> </h:math> phase to another orthorhombic <i:math xmlns:i="http://www.w3.org/1998/Math/MathML"> <i:mrow> <i:mo>(</i:mo> <i:mi>P</i:mi> <i:mi>b</i:mi> <i:mi>c</i:mi> <i:mi>n</i:mi> <i:mo>)</i:mo> </i:mrow> </i:math> phase. These findings provide crucial insights into stress and temperature-induced phase behavior of hafnia, guiding future experimental and theoretical studies for optimizing hafnia-based ferroelectric devices.

Physical Review MaterialsVol. 10(1)
University of Rochester (US)
Openalex Percentile: Top 73%
Ferroelectric and Negative Capacitance Devices
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