Kinetic acceleration of MoS <sub>2</sub> growth by oxy-metal-organic chemical vapor deposition
Kinetics determine the growth behavior of thin films, particularly for atomically thin transition-metal dichalcogenides. Metal-organic (MO) chemical vapor deposition (CVD) offers promise for scalable growth, but the reactions are kinetically limited, leading to nanometer-scale domain size and carbon contaminations. Here, we unveil the fundamental kinetic limitations and overcome them by introducing oxygen-assisted MOCVD (oxy-MOCVD) technology. By tuning reactions with oxygen, MO precursors are converted into high-purity transition-metal oxides and chalcogens, producing aligned molybdenum disulfide (MoS<sub>2</sub>) domains with a size and growth rate that are orders of magnitude larger than conventional MOCVD. The MoS<sub>2</sub> is free of carbon impurities and exhibits average mobility exceeding 100 square centimeters per volt per second. The scalability of oxy-MOCVD is demonstrated by 150-millimeter single-crystal MoS<sub>2</sub> wafers, proving the feasibility of industrial-scale production.
Authors
- Ningmu Nathan Zou
- Lang Wu
- jinlan wang
- Dongxu Fan (ORCID: https://orcid.org/0009-0005-0830-082X)
- Shitong Zhu
- Shengqiang Wu (ORCID: https://orcid.org/0000-0002-3302-5445)
- M. S. Feng
- Ruikang Dong
- Qingyu Yan (ORCID: https://orcid.org/0000-0001-8016-2277)
- ZeHua Hu
- Taotao Li
- Xinran Wang
- Wei Xu
- Fei Lu
- Yuan Gao
- Lei Liu
- Si Meng
- Yushu Wang
- Liang Ma
- Yi Shi
Institutions
- Nanjing Institute of Technology (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Southeast University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Science
- Published
- 2026-01-29
- DOI
- https://doi.org/10.1126/science.aec7259
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00