Detectors and beam monitors based on wide bandgap semiconductors at cryogenic temperatures

Wide-bandgap semiconductors, such as single-crystal diamond and sapphire, can be used to measure the flux of passing particles through a particle-induced conductivity effect. We recently demonstrated a diamond-based, electrodeless electron beam halo monitor. This monitor utilized a thin diamond blade placed within an open, high-quality microwave resonator. The blade partially intercepted the beam and changes in the RF properties of the resonator were used to infer beam parameters. To enhance the sensitivity of our semiconductor sensors, we propose two new techniques: (1) biasing the semiconductor sensor to support avalanche multiplication of free carriers, and (2) operating at cryogenic temperatures to reduce intrinsic semiconductor losses and increase the mobility of induced carriers. These techniques are applicable not only to particle beam diagnostics but also to the detection of various types of ionizing radiation.

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Publication Details

Journal
JACOW
Published
2026-01-29
DOI
https://doi.org/10.18429/jacow-napac2025-mop075
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
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article

Detectors and beam monitors based on wide bandgap semiconductors at cryogenic temperatures

Sergey Kuzikov, Gracie Burrows
JACOW
Diamond and Carbon-based Materials Research
article

Detectors and beam monitors based on wide bandgap semiconductors at cryogenic temperatures

Sergey Kuzikov, Gracie Burrows
article en

Abstract

Wide-bandgap semiconductors, such as single-crystal diamond and sapphire, can be used to measure the flux of passing particles through a particle-induced conductivity effect. We recently demonstrated a diamond-based, electrodeless electron beam halo monitor. This monitor utilized a thin diamond blade placed within an open, high-quality microwave resonator. The blade partially intercepted the beam and changes in the RF properties of the resonator were used to infer beam parameters. To enhance the sensitivity of our semiconductor sensors, we propose two new techniques: (1) biasing the semiconductor sensor to support avalanche multiplication of free carriers, and (2) operating at cryogenic temperatures to reduce intrinsic semiconductor losses and increase the mobility of induced carriers. These techniques are applicable not only to particle beam diagnostics but also to the detection of various types of ionizing radiation.

JACOW
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Diamond and Carbon-based Materials Research
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