A 2-GHz Low-Noise Amplifier Using Fully Distributed Microstrip Matching Networks

This work describes the design and experimental testing of a low-noise amplifier (LNA) fabricated on a printed circuit board (PCB) and operating near 2 GHz. The amplifier uses a discrete bipolar junction transistor (BJT) together with fully distributed microstrip matching networks without relying on lumped matching components. The main design goal is to obtain stable operation with low noise figure and moderate gain over a wide frequency range while keeping the circuit tolerant to layout parasitics and fabrication variations. Circuit-level simulations are performed using AWR Microwave Office and are followed by full-wave electromagnetic simulations in Sonnet Software to account for layout-dependent effects. A prototype is fabricated on a 60-mil Rogers RO4003C substrate and characterized through S-parameter, noise-figure, and linearity measurements. Measured results show a gain of approximately 13.84 ± 1 dB over the 1.75–2.25 GHz frequency range, with a minimum noise figure of 1.615 dB at 2 GHz. Stable operation is maintained across the entire band, and the measured 1 dB gain compression point is approximately 0.5 dBm. The results demonstrate that a fully distributed microstrip matching approach provides a practical and reproducible PCB-based LNA solution for sub-6-GHz receiver front-end applications.