Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Thin Films via Novel Interface Layer Approach

Publication Details

Journal
Apollo (University of Cambridge)
Published
2025-09-04
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach

Apollo (University of Cambridge)
Ferroelectric and Negative Capacitance Devices
article

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach

article en

Abstract

No abstract available for this paper.
Apollo (University of Cambridge)
Affordable and clean energy
Openalex Percentile: Top 37%
Ferroelectric and Negative Capacitance Devices
OpenAlex
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Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Thin Films via Novel Interface Layer Approach · Apollo (University of Cambridge) (2025) | TGRS Research Map | TGRS