Polarization-modulated programmable photovoltaic performance of a designed ferroelectric heterojunction
Conventional photovoltaic devices based on PN or Schottky junctions are inherently constrained by the material band gap, resulting in limited photoelectric conversion efficiency. The van der Waals ferroelectric material CuInP<sub>2</sub>S<sub>6</sub> offers strong potential for efficient photocurrent generation via bulk photovoltaic effect, while heterostructure engineering provides additional degrees of freedom for performance modulation. Yet, the specificity in asymmetric CuInP<sub>2</sub>S<sub>6</sub> heterojunctions remains poorly understood. Here, we design and fabricate an asymmetric photovoltaic device, consisting of Pt/CuInP<sub>2</sub>S<sub>6</sub>/Graphene heterostructure. The ferroelectric photovoltaic effect couples with the Cu<sup>+</sup> migration dynamics, which could be manipulated by asymmetric interface barriers. Remarkably, the photovoltaic current is increased by 10 times and exhibits a positive-negative switching through polarization modulation. The heterojunction device achieves on-demand photovoltaic programming for in-sensor computing tasks, including edge detection with recognition rate F-score ~ 1 and binary pattern classification with 100% accuracy, which provides new insights for next-generation visual technology.
Authors
- Shuaizhao Jin (ORCID: https://orcid.org/0009-0008-0926-0956)
- Gang Tang (ORCID: https://orcid.org/0000-0003-4665-8599)
- Xueyun Wang
- Pengying Chang
- Meijiao Men
- Zijing Zhao
- Wuyang Ren
- Jiawang Hong
- Zunyi Deng
- Jiang Wu
- Xingan Jiang
- Yiyang Xie
- Lingchen Liu
- Lili Wang
- Yuanyuan Cui
- Sang-Wook Cheong
Institutions
- Rutgers, The State University of New Jersey (US)
- University of Electronic Science and Technology of China (CN)
- Ningbo University of Technology (CN)
- Chinese Academy of Sciences (CN)
- Beijing University of Technology (CN)
- Beijing Institute of Optoelectronic Technology (CN)
- Detector Technology (United States) (US)
- Space Engineering University (CN)
- Institute of Semiconductors (CN)
- Tianshui Normal University (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-01-28
- DOI
- https://doi.org/10.1038/s41467-026-68853-y
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China