Revealing Wire Deflection in Silicon Wafer Slicing to Minimize Diamond Wire Waste

ABSTRACT Diamond multi‐wire slicing (D‐MWS) is increasingly used for the production of monocrystalline silicon wafers, but the process introduces characteristic surface waviness and wire wear phenomena that limit wafer quality. This study systematically analyzes the mechanical behavior and deflection of diamond wires during slicing, comparing coarse and fine wire types under varying wire consumption conditions. Using scanning electron microscopy and energy dispersive X‐ray spectroscopy diagnostics, full‐wafer shape measurements, and frequency analysis, the evolution of wire activation, abrasive efficiency, and slicing‐induced asymmetry is investigated. It is shown that the deflection of a wire is a sensitive indicator of mechanical stress, wire activation state, and the onset of critical wear or wire breakage. Periodic surface corrugations are traced to manufacturing‐induced variations in wire properties, confirmed by Fast Fourier Transform analysis. Excessive reduction in wire consumption increases surface waviness and risk of wire breakage, while moderate increases in wire usage improve wafer flatness and process reliability for advanced design rules. Monitoring of wire deflection enables predictive process control and early warning of wire overload. The findings provide practical guidelines for optimizing wire usage and slicing parameters, supporting the production of high‐quality wafers for demanding semiconductor applications.