Low-Temperature Defect Healing in the Layered Zintl Phase Li <sub>2</sub> ZnSi

Li<sub>2</sub>ZnSi is a layered Zintl phase composed of heterographene-like Zn-Si sheets separated by Li atoms. Although the intrinsic crystal structure is fully ordered, mechanical handling readily introduces stacking faults of the Zn-Si layers. These defects significantly broaden the <sup>7</sup>Li and <sup>29</sup>Si NMR signals and are described by statistically disordered structure models in single-crystal X-ray diffraction. Upon moderate heating to only 310-370 K, the <sup>7</sup>Li NMR spectra sharpen, while single-crystal X-ray diffraction reveals a fully ordered structure model. The heat-capacity data exhibit a broad endothermic feature during heating, characteristic of a stress-relief annealing process rather than a thermodynamic phase transition. Mechanical treatment strongly affects physical properties, and the transport response in impedance measurements is dominated by grain-boundary effects. Density-functional calculations show that the stacking-fault formation is energetically unfavorable but localized, explaining why the defects are readily introduced mechanically and can be healed at unexpectedly low temperatures.

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Publication Details

Journal
Inorganic Chemistry
Published
2026-01-27
DOI
https://doi.org/10.1021/acs.inorgchem.5c05692
Primary Topic
Advanced Battery Materials and Technologies
Type
article
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article

Low-Temperature Defect Healing in the Layered Zintl Phase Li 2 ZnSi

Xian-Juan Feng, Bodo Böhme, Michael Baitinger, Matej Bobnar et al.
Inorganic Chemistry
Advanced Battery Materials and Technologies
article

Low-Temperature Defect Healing in the Layered Zintl Phase Li 2 ZnSi

Xian-Juan Feng, Bodo Böhme, Michael Baitinger, Matej Bobnar, Mitja Krnel, Julia Maria Hübner, Marcus Schmidt, Alim Ormeci, Mohammad Mehmandoust
article en

Abstract

Li<sub>2</sub>ZnSi is a layered Zintl phase composed of heterographene-like Zn-Si sheets separated by Li atoms. Although the intrinsic crystal structure is fully ordered, mechanical handling readily introduces stacking faults of the Zn-Si layers. These defects significantly broaden the <sup>7</sup>Li and <sup>29</sup>Si NMR signals and are described by statistically disordered structure models in single-crystal X-ray diffraction. Upon moderate heating to only 310-370 K, the <sup>7</sup>Li NMR spectra sharpen, while single-crystal X-ray diffraction reveals a fully ordered structure model. The heat-capacity data exhibit a broad endothermic feature during heating, characteristic of a stress-relief annealing process rather than a thermodynamic phase transition. Mechanical treatment strongly affects physical properties, and the transport response in impedance measurements is dominated by grain-boundary effects. Density-functional calculations show that the stacking-fault formation is energetically unfavorable but localized, explaining why the defects are readily introduced mechanically and can be healed at unexpectedly low temperatures.

Inorganic ChemistryVol. 65(5)
Max Planck Institute for Chemical Physics of Solids (DE), Krka (Slovenia) (SI), TU Bergakademie Freiberg (DE), Technische Universität Dresden (DE)
Openalex Percentile: Top 76%
Advanced Battery Materials and Technologies
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