On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits

This study demonstrates an on-chip electrically tunable whispering gallery mode resonator (WGMR) operating in the terahertz (THz) band, fabricated on a silicon platform. The device consists of a micro-ring resonator with integrated platinum electrodes for voltage application. By leveraging the thermo-optic effect of silicon, the resonant frequency of the WGMR is dynamically shifted via Joule heating induced by an applied voltage, enabling continuous electrical tuning of the resonance. Experimental results show a continuous frequency tunability of 0.40 GHz/W, with the resonator exhibiting a measured quality factor (Q-factor) of 199 around 390 GHz. This work provides a compact, integrable, and efficient solution for active resonance control in THz integrated circuits, with promising applications in reconfigurable filters, modulators, sensors, and next-generation wireless communication systems.

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Publication Details

Journal
Applied Physics Letters
Published
2026-01-26
DOI
https://doi.org/10.1063/5.0307569
Primary Topic
Photonic and Optical Devices
Type
article
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article

On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits

Labao Zhang, Xiaoqing Jia, Junyi Wu, Zeyu Xu et al.
Applied Physics Letters
Photonic and Optical Devices
article

On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits

Labao Zhang, Xiaoqing Jia, Junyi Wu, Zeyu Xu, Jun Zhou, Jian Chen, Huilin Zhang, Dingxuan Gu, Xuecou Tu, Shuang Ding, Ziyao Ye, Lin Kang, Bingnan Yan, Zhanzhang Mai, Yunjie Rui, Ning Zhao, Shuyu Zhou, Heng Tang, Qingyuan Zhao, Peiheng Wu
article en

Abstract

This study demonstrates an on-chip electrically tunable whispering gallery mode resonator (WGMR) operating in the terahertz (THz) band, fabricated on a silicon platform. The device consists of a micro-ring resonator with integrated platinum electrodes for voltage application. By leveraging the thermo-optic effect of silicon, the resonant frequency of the WGMR is dynamically shifted via Joule heating induced by an applied voltage, enabling continuous electrical tuning of the resonance. Experimental results show a continuous frequency tunability of 0.40 GHz/W, with the resonator exhibiting a measured quality factor (Q-factor) of 199 around 390 GHz. This work provides a compact, integrable, and efficient solution for active resonance control in THz integrated circuits, with promising applications in reconfigurable filters, modulators, sensors, and next-generation wireless communication systems.

Applied Physics LettersVol. 128(4)
Nanjing Normal University (CN), Hefei University (CN), Institute of Electronics (CN), Purple Mountain Laboratories (CN)
Affordable and clean energy
Openalex Percentile: Top 76%
Photonic and Optical Devices
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On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits — Labao Zhang, Xiaoqing Jia, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS