Investigation of Cu-site disorder in undoped and doped BiCuSeO

We carried out x-ray diffraction and extended x-ray absorption fine structure studies to investigate the origin of the low lattice thermal conductivity in BiCuSeO, and the role of silver (Ag) doping in doped samples. BiCuSeO is a promising thermoelectric material with high thermoelectric efficiency, which is significantly enhanced by doping either single Ag dopants or dual dopants (Pb and Ag). We verified that the thermal displacement parameters associated with copper (Cu) are significantly large in undoped BiCuSeO. Ag dopant, which replaces Cu, was also found to have similarly large thermal displacement parameters, that remain large down to low temperatures. Our results point towards significant disorder on the Cu-site in both undoped and doped BiCuSeO, which is retained by the Ag dopant upon replacing Cu. The disorder is observed to be localized on the Cu-site and seems to be independent of other atoms in the crystal structure. Our observation of the disorder, which could be either static or quasi-static, is consistent with a 'rattling' mode scenario.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2026-01-26
DOI
https://doi.org/10.1088/1361-648x/ae3d7b
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
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article

Investigation of Cu-site disorder in undoped and doped BiCuSeO

Dixshant Shree Shreemal, Sheetal Jain, Young‐June Kim, Blair Wilfred Lebert et al.
Journal of Physics Condensed Matter
Advanced Thermoelectric Materials and Devices
article

Investigation of Cu-site disorder in undoped and doped BiCuSeO

Dixshant Shree Shreemal, Sheetal Jain, Young‐June Kim, Blair Wilfred Lebert, Weifeng Chen, Ning Chen, Christopher John Smit Heath
article en

Abstract

We carried out x-ray diffraction and extended x-ray absorption fine structure studies to investigate the origin of the low lattice thermal conductivity in BiCuSeO, and the role of silver (Ag) doping in doped samples. BiCuSeO is a promising thermoelectric material with high thermoelectric efficiency, which is significantly enhanced by doping either single Ag dopants or dual dopants (Pb and Ag). We verified that the thermal displacement parameters associated with copper (Cu) are significantly large in undoped BiCuSeO. Ag dopant, which replaces Cu, was also found to have similarly large thermal displacement parameters, that remain large down to low temperatures. Our results point towards significant disorder on the Cu-site in both undoped and doped BiCuSeO, which is retained by the Ag dopant upon replacing Cu. The disorder is observed to be localized on the Cu-site and seems to be independent of other atoms in the crystal structure. Our observation of the disorder, which could be either static or quasi-static, is consistent with a 'rattling' mode scenario.

Journal of Physics Condensed MatterVol. 38(5)
University of Toronto (CA), Canadian Light Source (Canada) (CA)
Openalex Percentile: Top 77%
Advanced Thermoelectric Materials and Devices
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