3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination

This Letter demonstrates a high breakdown voltage (VBK) lateral AlGaN/GaN Schottky barrier diode (SBD) on Si substrate. Using the high-permittivity material BaTiO3 in a field plate structure provides the benefit of lowering the peak surface electric field from 2.9 to 1.9 MV/cm and improving VBK from 3.22 to 3.89 kV, when the anode–cathode distance (LAC) is 30 μm. Accompanied with a specific on-resistance (Rsp,on) of 3.89 mΩ cm2, the AlGaN/GaN SBD on Si substrate achieved a power figure-of-merit as high as 3.89 GW/cm2, indicating superior potential application in medium- to high-power devices.