Impact of structural and material parameters on sensitivity of engineered N-pocket DGTFET biosensors

Biosensors play a crucial role in medical, agricultural, food, and environmental monitoring, where high sensitivity and label-free detection are essential. Conventional FET-based biosensors exhibit limitations including elevated subthreshold slope, leakage current, and inadequate detection of neutral biomolecules. Tunnel FETs (TFETs) utilise a band-to-band tunnelling mechanism, providing steep switching characteristics and low-power operation; however, their practical application is constrained by low ON-current and ambipolar conduction issues. This study proposes and analyses a material developed double-gate TFET featuring an N-pocket and AlGaAs-based heterostructure, utilising Silvaco ATLAS simulations to enhance biosensing capabilities. The device incorporates GaSb–AlGaAs–GaAs heterostructures, dual-gate control, bilayer dielectrics, and optimised doping profiles to enhance tunnelling efficiency and sensitivity. The results indicate that the proposed design attains a subthreshold swing of 9.2 mV/dec, an I on /I off ratio of 4 × 10 13 , and a reduced threshold voltage of 0.32 V, surpassing traditional silicon-based and non-pocket devices. Sensitivity analysis indicates a notable improvement with rising dielectric constant, molar fraction and positive biomolecule conditions, whereas negative biomolecules diminish sensitivity as anticipated due to repulsive interactions. The N-pocket DGTFET exhibits stable and reproducible sensitivity relative to conventional and pocket-less devices, with a doping dimension of 3 nm × 10 nm providing an optimal balance between sensitivity and stability. The device demonstrates a significant enhancement in selectivity, achieving sensitivity values of up to 1.20 × 10 5 , which exceeds the performance of previously reported TFET biosensors by multiple orders of magnitude. The findings demonstrate that the modified DGTFET serves as a reliable, energy-efficient, and highly sensitive platform for label-free biomolecule detection.

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Journal
Frontiers in Physics
Published
2026-01-26
DOI
https://doi.org/10.3389/fphy.2025.1757118
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
Field-Weighted Citation Impact
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article

Impact of structural and material parameters on sensitivity of engineered N-pocket DGTFET biosensors

Jitendra Kumar Das, Ghada Ahmed Khouqeer, Sushanta Kumar Mohapatra, Pallabi Pahari et al.
Frontiers in Physics
Advancements in Semiconductor Devices and Circuit Design
article

Impact of structural and material parameters on sensitivity of engineered N-pocket DGTFET biosensors

Jitendra Kumar Das, Ghada Ahmed Khouqeer, Sushanta Kumar Mohapatra, Pallabi Pahari, Naglaa AbdelAll
article en

Abstract

Biosensors play a crucial role in medical, agricultural, food, and environmental monitoring, where high sensitivity and label-free detection are essential. Conventional FET-based biosensors exhibit limitations including elevated subthreshold slope, leakage current, and inadequate detection of neutral biomolecules. Tunnel FETs (TFETs) utilise a band-to-band tunnelling mechanism, providing steep switching characteristics and low-power operation; however, their practical application is constrained by low ON-current and ambipolar conduction issues. This study proposes and analyses a material developed double-gate TFET featuring an N-pocket and AlGaAs-based heterostructure, utilising Silvaco ATLAS simulations to enhance biosensing capabilities. The device incorporates GaSb–AlGaAs–GaAs heterostructures, dual-gate control, bilayer dielectrics, and optimised doping profiles to enhance tunnelling efficiency and sensitivity. The results indicate that the proposed design attains a subthreshold swing of 9.2 mV/dec, an I on /I off ratio of 4 × 10 13 , and a reduced threshold voltage of 0.32 V, surpassing traditional silicon-based and non-pocket devices. Sensitivity analysis indicates a notable improvement with rising dielectric constant, molar fraction and positive biomolecule conditions, whereas negative biomolecules diminish sensitivity as anticipated due to repulsive interactions. The N-pocket DGTFET exhibits stable and reproducible sensitivity relative to conventional and pocket-less devices, with a doping dimension of 3 nm × 10 nm providing an optimal balance between sensitivity and stability. The device demonstrates a significant enhancement in selectivity, achieving sensitivity values of up to 1.20 × 10 5 , which exceeds the performance of previously reported TFET biosensors by multiple orders of magnitude. The findings demonstrate that the modified DGTFET serves as a reliable, energy-efficient, and highly sensitive platform for label-free biomolecule detection.

Frontiers in PhysicsVol. 13
Haldia Institute of Technology (IN), Imam Mohammad ibn Saud Islamic University (SA), Islamic University (BD), KIIT University (IN)
Al-Imam Muhammad Ibn Saud Islamic University
Openalex Percentile: Top 77%
Advancements in Semiconductor Devices and Circuit Design
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