Electric‐Field Control of Terahertz Response via Spin‐Corner‐Layer Coupling in Altermagnetic Bilayers

Electric field control of electron charge and spin degrees of freedom is fundamental to modern semiconductor and spintronic devices. Yet controlling electromagnetic waves with an electric field, particularly in the terahertz (THz) band, remains a challenge. Here, we propose a spin-corner-layer coupling (SCLC) mechanism in second-order topological altermagnetic bilayers. By using an electric field to influence electrons between different layers, the SCLC mechanism enables simultaneous control over corner and spin degrees of freedom, thereby allowing electric-field tuning of the absorption, emission intensity, and even polarization of THz waves. Taking bilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:msub><mml:mi>NiZrI</mml:mi> <mml:mn>6</mml:mn></mml:msub> <mml:annotation>${\rm NiZrI}_6$</mml:annotation></mml:semantics> </mml:math> nanodisks as a prototype, we demonstrate that an ultralow electrostatic field can switch both the spin and the layer polarizations of corner states. This dual switching modulates transition dipole moments and oscillator strengths between different corner states, thereby enabling the manipulation of THz waves. This study establishes a mechanism for the electric-field control of spin and THz waves through SCLC, yielding important implications for the advancement of THz spintronics.

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Publication Details

Journal
Advanced Science
Published
2026-01-25
DOI
https://doi.org/10.1002/advs.202523285
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
31.39
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article

Electric‐Field Control of Terahertz Response via Spin‐Corner‐Layer Coupling in Altermagnetic Bilayers

Wenhong Wang, Yilin Han, Shifeng Qian, Xiaotian Wang et al.
1 citations
Advanced Science
Topological Materials and Phenomena
31.39
article

Electric‐Field Control of Terahertz Response via Spin‐Corner‐Layer Coupling in Altermagnetic Bilayers

Wenhong Wang, Yilin Han, Shifeng Qian, Xiaotian Wang, Jianhua Wang, Zhenxiang Cheng, Zhi‐Ming Yu
article en
1 citations

Abstract

Electric field control of electron charge and spin degrees of freedom is fundamental to modern semiconductor and spintronic devices. Yet controlling electromagnetic waves with an electric field, particularly in the terahertz (THz) band, remains a challenge. Here, we propose a spin-corner-layer coupling (SCLC) mechanism in second-order topological altermagnetic bilayers. By using an electric field to influence electrons between different layers, the SCLC mechanism enables simultaneous control over corner and spin degrees of freedom, thereby allowing electric-field tuning of the absorption, emission intensity, and even polarization of THz waves. Taking bilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:msub><mml:mi>NiZrI</mml:mi> <mml:mn>6</mml:mn></mml:msub> <mml:annotation>${\rm NiZrI}_6$</mml:annotation></mml:semantics> </mml:math> nanodisks as a prototype, we demonstrate that an ultralow electrostatic field can switch both the spin and the layer polarizations of corner states. This dual switching modulates transition dipole moments and oscillator strengths between different corner states, thereby enabling the manipulation of THz waves. This study establishes a mechanism for the electric-field control of spin and THz waves through SCLC, yielding important implications for the advancement of THz spintronics.

Advanced Science
Beijing Institute of Technology (CN), Tiangong University (CN), University of Wollongong (AU), Beijing Institute of Optoelectronic Technology (CN), Anhui Normal University (CN)
Peace, Justice and strong institutions
Openalex Percentile: Top 1%
Topological Materials and Phenomena
31.39
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