A compact and monolithically integrable 140 GHz InP HEMT fundamental mixer using 80-nm T-gate technology for terahertz receiver front-ends
A compact fundamental 140 GHz mixer using our in-house 80 nm T-gate InP HEMT process is designed, fabricated and characterized. A compact resistive topology is designed to enable low power consumption, high conversion gain and high integration. Measurement results show a maximum conversion gain of -9 dB and an IF bandwidth of 15 GHz within the 130 GHz-150 GHz range under a LO power of -1 dBm. The proposed resistive mixer features a compact size of 0.63 mm × 0.9 mm and can be fabricated with InP HEMT LNA on the same wafer. The results demonstrate that the mixer is well suited for integrated terahertz receiver front-ends.
Authors
- Jiaxing Sun (ORCID: https://orcid.org/0000-0002-4741-9939)
- Yan Su (ORCID: https://orcid.org/0000-0003-3970-3822)
- Yuxuan Chen (ORCID: https://orcid.org/0000-0002-5638-693X)
- Tong Liu (ORCID: https://orcid.org/0000-0001-8489-0466)
- Siyuan Liu (ORCID: https://orcid.org/0000-0002-0255-8847)
- Changqing Zhang (ORCID: https://orcid.org/0000-0003-2864-7749)
- Peng Ding (ORCID: https://orcid.org/0000-0001-5977-5570)
- Xu Han (ORCID: https://orcid.org/0000-0002-8738-3846)
- Y.-J. Gong
- Feng Yang
- Zhi Jin
- Yong Zhang
- Haomiao Wei
- Dayong Zhang
- Jingyuan Shi
- Yifei Xie
Institutions
- University of Electronic Science and Technology of China (CN)
- Dongguan University of Technology (CN)
- Institute of Microelectronics (SG)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- IEICE Electronics Express
- Published
- 2026-01-25
- DOI
- https://doi.org/10.1587/elex.23.20250697
- Primary Topic
- Superconducting and THz Device Technology
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China