Particle types and energy influence on the radiation response of charge coupled devices used for space optical imaging

A CCD has been manufactured using domestic CCD technology for space optical imaging applications. To evaluate the radiation resistance potential of the CCD, the CCDs were irradiated with various particles (i.e., protons, neutrons, electrons, and γ-rays). Total ionizing dose (TID), displacement damage (DD) effects, and their synergistic effects are investigated through the characterization and analysis of dark signal and charge transfer efficiency. It is shown that DD-induced dark signal increase and charge transfer efficiency degradation are greater than those of TID. There is a linear relation between parameter degradation and absorbed dose in the case of DD, but such a linear relationship does not exist in the case of TID, suggesting that the prediction of the radiation damage extent of DD is available compared to the TID effects. Furthermore, it is demonstrated that there is a synergistic effect of DD and TID, and this effect behaves as the enhancement of the radiation degradation extent on the CCD.

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Publication Details

Journal
Optics Express
Published
2026-01-26
DOI
https://doi.org/10.1364/oe.581308
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
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Particle types and energy influence on the radiation response of charge coupled devices used for space optical imaging

Yudong Li, Qi Guo, Zitao Zhao, Bingkai Liu et al.
Optics Express
CCD and CMOS Imaging Sensors
article

Particle types and energy influence on the radiation response of charge coupled devices used for space optical imaging

Yudong Li, Qi Guo, Zitao Zhao, Bingkai Liu, Lin Wen, Yihao Cui
article en

Abstract

A CCD has been manufactured using domestic CCD technology for space optical imaging applications. To evaluate the radiation resistance potential of the CCD, the CCDs were irradiated with various particles (i.e., protons, neutrons, electrons, and γ-rays). Total ionizing dose (TID), displacement damage (DD) effects, and their synergistic effects are investigated through the characterization and analysis of dark signal and charge transfer efficiency. It is shown that DD-induced dark signal increase and charge transfer efficiency degradation are greater than those of TID. There is a linear relation between parameter degradation and absorbed dose in the case of DD, but such a linear relationship does not exist in the case of TID, suggesting that the prediction of the radiation damage extent of DD is available compared to the TID effects. Furthermore, it is demonstrated that there is a synergistic effect of DD and TID, and this effect behaves as the enhancement of the radiation degradation extent on the CCD.

Optics ExpressVol. 34(4)
Chinese Academy of Sciences (CN), Xinjiang Technical Institute of Physics & Chemistry (CN), Xinjiang University (CN)
Affordable and clean energy
Openalex Percentile: Top 78%
CCD and CMOS Imaging Sensors
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