A Review of Thermal Management Techniques Adopted for High-Power-Density GaN-Based Converters

Power converters based on gallium nitride (GaN) are progressing swiftly owing to their exceptional efficiency and tiny dimensions, boosted by high power density and fast switching capabilities. Nevertheless, these benefits are accompanied by considerable thermal management issues that impact reliability, performance, and operational lifespan. This review examines advanced thermal management approaches for high-power-density GaN power converters, including active and passive cooling technologies, sophisticated packaging designs, and the use of novel materials like graphene and diamond to improve heat dissipation. The impacts of thermal boundary resistance, self-heating phenomena, and substrate selection on thermal performance are thoroughly analyzed. Strategies for enhancing printed circuit board (PCB) layouts, thermal vias, and the use of thermal interface materials (TIMs) are also emphasized. The study highlights co-design approaches that optimize thermal resistance and layout efficiency, supporting GaN operation under high-frequency conditions. This thorough investigation offers insights into addressing the thermal challenges linked to GaN technology, promoting its adoption in forthcoming power devices.

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Publication Details

Journal
Chips
Published
2026-01-22
DOI
https://doi.org/10.3390/chips5010004
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
21.93
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A Review of Thermal Management Techniques Adopted for High-Power-Density GaN-Based Converters

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1 citations
Chips
Silicon Carbide Semiconductor Technologies
21.93
article

A Review of Thermal Management Techniques Adopted for High-Power-Density GaN-Based Converters

Sonia Eloued, Mahmoud Hamouda, M. Belguith, M. Kadi, Jaleleddine Ben Hadj Slama
article en
1 citations

Abstract

Power converters based on gallium nitride (GaN) are progressing swiftly owing to their exceptional efficiency and tiny dimensions, boosted by high power density and fast switching capabilities. Nevertheless, these benefits are accompanied by considerable thermal management issues that impact reliability, performance, and operational lifespan. This review examines advanced thermal management approaches for high-power-density GaN power converters, including active and passive cooling technologies, sophisticated packaging designs, and the use of novel materials like graphene and diamond to improve heat dissipation. The impacts of thermal boundary resistance, self-heating phenomena, and substrate selection on thermal performance are thoroughly analyzed. Strategies for enhancing printed circuit board (PCB) layouts, thermal vias, and the use of thermal interface materials (TIMs) are also emphasized. The study highlights co-design approaches that optimize thermal resistance and layout efficiency, supporting GaN operation under high-frequency conditions. This thorough investigation offers insights into addressing the thermal challenges linked to GaN technology, promoting its adoption in forthcoming power devices.

ChipsVol. 5(1)
École Supérieure d'Ingénieurs en Génie Électrique (FR), Normandie Université (FR), Université de Rouen Normandie (FR), University of Sousse (TN)
Openalex Percentile: Top 2%
Silicon Carbide Semiconductor Technologies
21.93
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