Self-powered photodetector based on CuInP <sub>2</sub> S <sub>6</sub> /MoSe <sub>2</sub> heterostructure

The construction of two-dimensiona heterostructures offers a novel strategy for modulating optoelectronic devices. In this work, we fabricated CuInP<sub>2</sub>S<sub>6</sub>(CIPS)/MoSe<sub>2</sub>ferroelectric heterostructures by scotch-tape method and investigated its optoelectronic properties. The detector shows a gate voltage tunable photoelectric response, the responsivity is improved by approximately 3902%, achieving a maximum of 5.57 A W<sup>-1</sup>and the detectivity by 1785%, reaching 6.66 × 10<sup>8</sup>Jones. Interestingly, upon the application of a gate voltage, the polarized electric field arising from ferroelectricity of CIPS enables the device to operate in a self-powered mode. Remarkably, the devices attained a high responsivity of 170.86 mA W<sup>-1</sup>and a detectivity of 2.66 × 10<sup>9</sup>Jones, respectively. Our research demonstrates that ferroelectric heterojunctions exhibit significant potential for application in self-powered photodetectors.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2026-01-22
DOI
https://doi.org/10.1088/1361-648x/ae3c4d
Primary Topic
2D Materials and Applications
Type
article
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article

Self-powered photodetector based on CuInP 2 S 6 /MoSe 2 heterostructure

Jiaxin Cheng, Yanling Yin, Dongsheng Tang, Jie Li et al.
Journal of Physics Condensed Matter
2D Materials and Applications
article

Self-powered photodetector based on CuInP 2 S 6 /MoSe 2 heterostructure

Jiaxin Cheng, Yanling Yin, Dongsheng Tang, Jie Li, Canhui Pan, Guohao Yuan, Weichang Zhou, Yuehua Peng, Xue Chen
article en

Abstract

The construction of two-dimensiona heterostructures offers a novel strategy for modulating optoelectronic devices. In this work, we fabricated CuInP<sub>2</sub>S<sub>6</sub>(CIPS)/MoSe<sub>2</sub>ferroelectric heterostructures by scotch-tape method and investigated its optoelectronic properties. The detector shows a gate voltage tunable photoelectric response, the responsivity is improved by approximately 3902%, achieving a maximum of 5.57 A W<sup>-1</sup>and the detectivity by 1785%, reaching 6.66 × 10<sup>8</sup>Jones. Interestingly, upon the application of a gate voltage, the polarized electric field arising from ferroelectricity of CIPS enables the device to operate in a self-powered mode. Remarkably, the devices attained a high responsivity of 170.86 mA W<sup>-1</sup>and a detectivity of 2.66 × 10<sup>9</sup>Jones, respectively. Our research demonstrates that ferroelectric heterojunctions exhibit significant potential for application in self-powered photodetectors.

Journal of Physics Condensed MatterVol. 38(5)
Ministry of Education (IR), Hunan First Normal University (CN)
Openalex Percentile: Top 80%
2D Materials and Applications
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