Design of Lattice-Matched InAs1−xSbx/Al1−yInySb Type-I Quantum Wells with Tunable Near-To Mid-Infrared Emission (2–5 μm): A Strain-Optimized Approach for Optoelectronic Applications

We propose a strain-optimized design strategy for lattice-matched InAs_1-<i>x</i>Sb<i>_x</i>/Al_1-<i>y</i>In<i>_y</i>Sb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2-5 µm). By combining elastic strain energy minimization with band offset calculations, we identify Type-I alignment for Sb contents (<i>x</i> ≤ 0.40) and In contents (0.10 < <i>y</i> ≤ 1). At the same time, Type-II dominates at higher Sb compositions (<i>x</i> ≥ 0.50). Using the transfer matrix method under the effective mass approximation, we demonstrate precise emission tuning via QW thickness (<i>L</i>_W) and compositional control, achieving a wavelength coverage of 2-5 µm with <5% strain-induced energy deviation. Our results provide a roadmap for high-efficiency infrared optoelectronic devices, addressing applications in sensing and communications technologies.