Electronic and optical properties of ultra-wide gap two-dimensional germanium dioxide

We employ first principles density-functional theory and the Bethe-Salpeter equation (BSE) in the framework of tight-binding based maximally localized Wannier functions model to investigate the electronic and optical properties of free-standing two-dimensional (2D) germanium dioxide phases. All investigated 2D GeO<sub>2</sub>polymorphs exhibit ultra-wide band gaps (3.6-5.3 eV) and strong excitonic effects, with valence bands tunable under strain. These features allow the design of materials with ultra large electronic gaps in low-dimensional systems, making these materials promising for devices operation at higher voltages and temperatures than conventional semiconductor materials.

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Journal
Journal of Physics Condensed Matter
Published
2026-01-20
DOI
https://doi.org/10.1088/1361-648x/ae3af7
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Electronic and optical properties of ultra-wide gap two-dimensional germanium dioxide

Renato B. Pontes, Alexandre C. Dias, Danilo Kuritza, Andréia Luísa da Rosa et al.
Journal of Physics Condensed Matter
2D Materials and Applications
article

Electronic and optical properties of ultra-wide gap two-dimensional germanium dioxide

Renato B. Pontes, Alexandre C. Dias, Danilo Kuritza, Andréia Luísa da Rosa, Rafael Franco Ribeiro Reis, Jose Eduardo Padilha, Gabriel Gama Araújo
article en

Abstract

We employ first principles density-functional theory and the Bethe-Salpeter equation (BSE) in the framework of tight-binding based maximally localized Wannier functions model to investigate the electronic and optical properties of free-standing two-dimensional (2D) germanium dioxide phases. All investigated 2D GeO<sub>2</sub>polymorphs exhibit ultra-wide band gaps (3.6-5.3 eV) and strong excitonic effects, with valence bands tunable under strain. These features allow the design of materials with ultra large electronic gaps in low-dimensional systems, making these materials promising for devices operation at higher voltages and temperatures than conventional semiconductor materials.

Journal of Physics Condensed MatterVol. 38(5)
Instituto Federal de Educação, Ciência e Tecnologia de Brasília (BR), Institute of Physics (AZ), Universidade Federal do Paraná (BR), Universidade Federal de Goiás (BR)
Openalex Percentile: Top 82%
2D Materials and Applications
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