Carrier Dynamics of <i>β</i> ‐Ga ₂ O ₃ Single Crystal

Abstract β ‐Ga 2 O 3 is a promising ultra‐wide bandgap semiconductor with substantial potential for optoelectronic applications. A deeper understanding of its carrier dynamics is essential for optimizing device performance. In this study, the carrier dynamics in unintentionally doped β ‐Ga 2 O 3 (100) single crystals across a broad range of timescales, from sub‐picosecond to microseconds, are investigated. The sub‐picosecond dynamics are resolved into three distinct kinetic components: two Gaussian processes, which are attributed to nondegenerate two‐photon absorption, and a single‐exponential decay corresponding to hot carrier relaxation. Additionally, defect‐state‐mediated carrier recombination processes that occur on timescales ranging from picoseconds to microseconds are explored. These findings offer valuable insights into the photophysical properties of β ‐Ga 2 O 3 , providing a foundation for optimizing its performance in future optoelectronic devices.