Analysis and design of aging-resistant strategies for TCFF

With the increasing demand for energy-efficient chips, various low-power flip-flops have been developed. Among these, TCFF has attracted significant attention for its ability to achieve low power consumption while maintaining overall performance. However, under advanced process technologies, TCFF faces challenges such as increased delay and potential functional failures caused by device aging. This paper proposes an anti-aging strategy for TCFF to address these challenges, leveraging the synergistic optimization of structural modification and Transistor size adjustment. Results demonstrate that TCFF exhibits reduced delay degradation across all corners. In particular, under the FF corner, the delay degradation of the rising and falling edges is mitigated by 19% and 12%, respectively. Moreover, the power-delay product (PDP) of TCFF increases by only 3.7%, while its static power consumption shows a slight reduction.

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Publication Details

Journal
IEICE Electronics Express
Published
2026-01-20
DOI
https://doi.org/10.1587/elex.23.20250647
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Analysis and design of aging-resistant strategies for TCFF

Yongbo Cai, Hao Zhu, Xinyu Zhao, Qingqing Sun et al.
IEICE Electronics Express
Semiconductor materials and devices
article

Analysis and design of aging-resistant strategies for TCFF

Yongbo Cai, Hao Zhu, Xinyu Zhao, Qingqing Sun, Meng Li
article en

Abstract

With the increasing demand for energy-efficient chips, various low-power flip-flops have been developed. Among these, TCFF has attracted significant attention for its ability to achieve low power consumption while maintaining overall performance. However, under advanced process technologies, TCFF faces challenges such as increased delay and potential functional failures caused by device aging. This paper proposes an anti-aging strategy for TCFF to address these challenges, leveraging the synergistic optimization of structural modification and Transistor size adjustment. Results demonstrate that TCFF exhibits reduced delay degradation across all corners. In particular, under the FF corner, the delay degradation of the rising and falling edges is mitigated by 19% and 12%, respectively. Moreover, the power-delay product (PDP) of TCFF increases by only 3.7%, while its static power consumption shows a slight reduction.

IEICE Electronics ExpressVol. 23(5)
Fudan University (CN), Shanghai Fudan Microelectronics (China) (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 81%
Semiconductor materials and devices
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