Metal Single Atoms Beyond Catalysis as Quantum Modulators for Programmable Electronic Structures and Adaptive Electronics

Metal single atoms have long been recognized for their catalytic activity through strong local interactions with host substrates. Beyond catalysis, their potential to reconfigure substrate electronic structures surpassing the host's intrinsic limits remains largely unexplored. Here, we develop an atomically engineered band-modulation strategy, in which representative d-series (Fe, Co, Ni, Cu) and p-series (In, Sn, Sb, Te) atoms are anchored on 2D frameworks, including MXenes, graphene, g-C<sub>3</sub>N<sub>4</sub>, and MoS<sub>2</sub>. These atoms act as quantum modulators, precisely reconfiguring substrate structures and inducing anomalous quantum effects, which yield distinctive phenomena, including band inversion, flattening, and van Hove singularities, features rarely attainable through conventional band-engineering strategies. The tailored electronic landscape enables linear, voltage-driven tuning of electrical behavior, achieving several tens of times enhancement in dielectric permittivity and a dynamic and continuous transition from semiconducting to conductive states, all realized under an exceptionally low bias (<1.0 V). These functionalities are extended to a flexible electromagnetic switch that achieves programmable control of signal transmission, absorption, and reflection, overcoming the persistent difficulty of dynamic electromagnetic regulation while operating at a record-thin microscale thickness (∼600 µm). This work establishes an atomically engineered band-modulation strategy as a versatile platform, paving the way for reconfigurable electronics and quantum devices.

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Publication Details

Journal
Advanced Materials
Published
2026-01-21
DOI
https://doi.org/10.1002/adma.202521186
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
16.08
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Metal Single Atoms Beyond Catalysis as Quantum Modulators for Programmable Electronic Structures and Adaptive Electronics

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article

Metal Single Atoms Beyond Catalysis as Quantum Modulators for Programmable Electronic Structures and Adaptive Electronics

Jiachen Sun, Yipeng Zang, Huanqin Zhao, Hua Min Qiu, Linhe Yu, Qianpeng Zhang, Da Liu, Long Pan, Minhao Zhang, Enbo Zhou, Tong Zhou, Hualiang Lv, Mukun He, Ben Fei, Yufu Gao
article en
1 citations

Abstract

Metal single atoms have long been recognized for their catalytic activity through strong local interactions with host substrates. Beyond catalysis, their potential to reconfigure substrate electronic structures surpassing the host's intrinsic limits remains largely unexplored. Here, we develop an atomically engineered band-modulation strategy, in which representative d-series (Fe, Co, Ni, Cu) and p-series (In, Sn, Sb, Te) atoms are anchored on 2D frameworks, including MXenes, graphene, g-C<sub>3</sub>N<sub>4</sub>, and MoS<sub>2</sub>. These atoms act as quantum modulators, precisely reconfiguring substrate structures and inducing anomalous quantum effects, which yield distinctive phenomena, including band inversion, flattening, and van Hove singularities, features rarely attainable through conventional band-engineering strategies. The tailored electronic landscape enables linear, voltage-driven tuning of electrical behavior, achieving several tens of times enhancement in dielectric permittivity and a dynamic and continuous transition from semiconducting to conductive states, all realized under an exceptionally low bias (<1.0 V). These functionalities are extended to a flexible electromagnetic switch that achieves programmable control of signal transmission, absorption, and reflection, overcoming the persistent difficulty of dynamic electromagnetic regulation while operating at a record-thin microscale thickness (∼600 µm). This work establishes an atomically engineered band-modulation strategy as a versatile platform, paving the way for reconfigurable electronics and quantum devices.

Advanced MaterialsVol. 38(13)
Anhui University (CN), Northwestern Polytechnical University (CN), Chinese University of Hong Kong (HK), Wuhan University of Technology (CN), Nankai University (CN), Fudan University (CN), Xi'an Technological University (CN), Shanghai Fudan Microelectronics (China) (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Southeast University (CN)
Openalex Percentile: Top 3%
2D Materials and Applications
16.08
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