Compositional Engineering for Low-Dark-Current Perovskite X-ray Detectors
Polycrystalline perovskites have attracted extensive interest in the field of X-ray detection/imaging due to their excellent compatibility with scalable processing. However, despite recent advances, polycrystalline perovskite X-ray direct detectors are plagued by the relatively high dark currents in imaging applications. Herein, we experimentally demonstrate that the dark current of polycrystalline perovskite X-ray detectors can be controlled by tuning the composition of perovskites. In particular, the incorporation of bromine (Br) into methylammonium lead iodide (MAPbI<sub>3</sub>) modifies the bandgap, increases electrical resistance, reduces the defects, improves the crystallinity, and suppresses the nonradiative recombination, thereby comprehensively causing the reduction of dark currents. At a doping concentration of 15%, the bulk resistivity of MAPb(I<sub>1-<i>x</i></sub>Br<i><sub>x</sub></i>)<sub>3</sub> layer increases to 1.3 × 10<sup>8</sup> Ω·cm, leading to a low dark current density down to 0.801 nA·cm<sup>-2</sup>. Consequently, the X-ray detector shows a low detection limit of 118.4 nGy<sub>air</sub> s<sup>-1</sup> and a sensitivity to noise-current ratio of 7.27 × 10<sup>11</sup> μC Gy<sub>air</sub><sup>-1</sup> A<sup>-1</sup>. By integrating the Br-doped MAPbI<sub>3</sub> X-ray detector into a readout integrated circuit, the X-ray imager exhibits high-quality imaging capability. The results reveal a simple and effective strategy to minimize dark currents in perovskite X-ray detectors, and the detector has high potential in high-performance X-ray flat-panel imagers for industrial and medical applications.
Authors
- Jia Li (ORCID: https://orcid.org/0000-0002-2270-9876)
- Shuai Sun (ORCID: https://orcid.org/0000-0003-3986-1628)
- Dilshod Nematov
- Muhammad Irfan (ORCID: https://orcid.org/0000-0003-2955-4237)
- Zeren Li
- Liye Yang
- Wenjie Chen
- Shumei Chen
- Mengpei Zhang
Institutions
- City University of Hong Kong (HK)
- Shenzhen University (CN)
- Academy of Sciences of the Republic of Tajikistan (TJ)
- Harbin Institute of Technology (CN)
- Integrated Optoelectronics (Norway) (NO)
- Physical and Technical Institute (BY)
- Shenzhen Technology University (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-01-21
- DOI
- https://doi.org/10.1021/acsami.5c19126
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00