High-resolution grayscale printing on Ge thin films via two-beam direct laser writing
Grayscale lithography is crucial for micro-optical component fabrication but faces challenges in resolution and cost. Conventional methods are diffraction-limited, while phase-change materials often require complex processing. This work presents germanium (Ge) thin films as a versatile platform for maskless grayscale printing. A custom dual-beam direct laser writing system is developed, using a 450 nm auxiliary laser for localized preheating and a 405 nm writing beam for patterning. The writing laser modulates grayscale tones by adjusting surface roughness, oxidation level, and crystallization. This dual-beam setup enables high-resolution, multilevel printing with a maximum resolution of 7.9×10<sup>4</sup> DPI, enhancing thermal control. Arbitrary grayscale images are successfully fabricated, establishing Ge thin films as a promising medium for high-resolution grayscale lithography.
Authors
- Zhihong Huang
- Jingsong Wei
- Bowen Chen
- Tao Wei
Institutions
- Chinese Academy of Sciences (CN)
- Suzhou University of Science and Technology (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Applied Optics
- Published
- 2026-01-21
- DOI
- https://doi.org/10.1364/ao.582475
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.00