High-resolution grayscale printing on Ge thin films via two-beam direct laser writing

Grayscale lithography is crucial for micro-optical component fabrication but faces challenges in resolution and cost. Conventional methods are diffraction-limited, while phase-change materials often require complex processing. This work presents germanium (Ge) thin films as a versatile platform for maskless grayscale printing. A custom dual-beam direct laser writing system is developed, using a 450 nm auxiliary laser for localized preheating and a 405 nm writing beam for patterning. The writing laser modulates grayscale tones by adjusting surface roughness, oxidation level, and crystallization. This dual-beam setup enables high-resolution, multilevel printing with a maximum resolution of 7.9×10<sup>4</sup> DPI, enhancing thermal control. Arbitrary grayscale images are successfully fabricated, establishing Ge thin films as a promising medium for high-resolution grayscale lithography.

Authors

Institutions

Publication Details

Journal
Applied Optics
Published
2026-01-21
DOI
https://doi.org/10.1364/ao.582475
Primary Topic
Phase-change materials and chalcogenides
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

High-resolution grayscale printing on Ge thin films via two-beam direct laser writing

Zhihong Huang, Jingsong Wei, Bowen Chen, Tao Wei
Applied Optics
Phase-change materials and chalcogenides
article

High-resolution grayscale printing on Ge thin films via two-beam direct laser writing

Zhihong Huang, Jingsong Wei, Bowen Chen, Tao Wei
article en

Abstract

Grayscale lithography is crucial for micro-optical component fabrication but faces challenges in resolution and cost. Conventional methods are diffraction-limited, while phase-change materials often require complex processing. This work presents germanium (Ge) thin films as a versatile platform for maskless grayscale printing. A custom dual-beam direct laser writing system is developed, using a 450 nm auxiliary laser for localized preheating and a 405 nm writing beam for patterning. The writing laser modulates grayscale tones by adjusting surface roughness, oxidation level, and crystallization. This dual-beam setup enables high-resolution, multilevel printing with a maximum resolution of 7.9×10<sup>4</sup> DPI, enhancing thermal control. Arbitrary grayscale images are successfully fabricated, establishing Ge thin films as a promising medium for high-resolution grayscale lithography.

Applied OpticsVol. 65(6)
Chinese Academy of Sciences (CN), Suzhou University of Science and Technology (CN), University of Chinese Academy of Sciences (CN)
Quality Education
Openalex Percentile: Top 82%
Phase-change materials and chalcogenides
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.