Prediction of the Output Characteristic of a MOSFET Switching Circuit with Broadband Noise Excitation

This study aimed to predict the input and output characteristics of MOSFET switching circuits exposed to complex electromagnetic environments through circuit simulations. CW, AM, and PM signals compliant with the radiated immunity standards IEC 61000-4-3 and ISO 11452-1 were used as external noise sources, and a 20 MHz bandwidth OFDM signal was used as a broadband noise source. Dambrine’s extraction method was applied to extract the intrinsic and extrinsic components of the device, which were incorporated into the simulation model, resulting in improved prediction accuracy. The noise signals were applied using the DPI method, and the effects of each signal source on the circuit were compared. The results showed that AM and OFDM excitations are more likely to induce malfunctions than CW or PM excitations. Furthermore, the proposed simulations accurately predicted these outcomes.