Preliminary radiation hardness characterization of ultra-broadband direct THz detectors based on Schottky diodes and GaAs TeraFETs

Many currently operating and future FELs can generate radiation at megahertz repetition rates, requiring an ultra-broadband, compact, robust & fast (response time at least on a single-digit nanosecond scale) diagnostic tool. We develop ultrafast-operating terahertz detectors based on Schottky diodes and GaAs field-effect transistors (TeraFETs) that operate at room temperature. Here, we present the preliminary radiation hardness characterization of these detectors. Promising results demonstrate the ability of these detectors to be commissioned at accelerator facilities for longitudinal beam diagnostics.