Over 300 mW O-band 8-channel DFB laser array for optical I/O technology

A high-power distributed feedback laser array suitable for optical I/O applications is demonstrated. The epitaxial structure incorporates a high-refractive-index layer in the N-doped region to improve single-transverse-mode characteristics and reduce internal loss, enabling single-mode operation at a ridge width of 5 µm with an internal loss of 3 cm<sup>-1</sup>. An asymmetric π-phase-shift, implemented using the reconstruction-equivalent chirp technique, ensures high single-mode yield. The fabricated array achieves output powers above 300 mW per channel at 25 °C with 800 mA injection current and exhibits uniform channel spacing with side mode suppression ratios exceeding 50 dB. Stable single-longitudinal-mode operation is maintained without mode hopping over a broad current and temperature tuning range. Under simultaneous operation at an injection current of 300 mA per channel, all channels of the laser array deliver output powers exceeding 100 mW, with an average wavelength deviation of 0.0692 nm. The devices further show a minimum Lorentzian linewidth of 300 kHz, and relative intensity noise of -154 dB/Hz, demonstrating strong potential for high-speed optical interconnects.

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Publication Details

Journal
Optics Express
Published
2026-01-19
DOI
https://doi.org/10.1364/oe.581698
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Over 300 mW O-band 8-channel DFB laser array for optical I/O technology

You Liang, Zhenxing Sun, Shenghong Xie, Yinyin Hu et al.
Optics Express
Semiconductor Lasers and Optical Devices
article

Over 300 mW O-band 8-channel DFB laser array for optical I/O technology

You Liang, Zhenxing Sun, Shenghong Xie, Yinyin Hu, Bocang Qiu, Lianping Hou, Feng Wang, Xiangfei Chen, tongtong yang, Yuechun Shi
article en

Abstract

A high-power distributed feedback laser array suitable for optical I/O applications is demonstrated. The epitaxial structure incorporates a high-refractive-index layer in the N-doped region to improve single-transverse-mode characteristics and reduce internal loss, enabling single-mode operation at a ridge width of 5 µm with an internal loss of 3 cm<sup>-1</sup>. An asymmetric π-phase-shift, implemented using the reconstruction-equivalent chirp technique, ensures high single-mode yield. The fabricated array achieves output powers above 300 mW per channel at 25 °C with 800 mA injection current and exhibits uniform channel spacing with side mode suppression ratios exceeding 50 dB. Stable single-longitudinal-mode operation is maintained without mode hopping over a broad current and temperature tuning range. Under simultaneous operation at an injection current of 300 mA per channel, all channels of the laser array deliver output powers exceeding 100 mW, with an average wavelength deviation of 0.0692 nm. The devices further show a minimum Lorentzian linewidth of 300 kHz, and relative intensity noise of -154 dB/Hz, demonstrating strong potential for high-speed optical interconnects.

Optics ExpressVol. 34(3)
Ningbo University (CN), University of Glasgow (GB), Nanjing University (CN)
Affordable and clean energy
Openalex Percentile: Top 82%
Semiconductor Lasers and Optical Devices
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