Realization of a Bulk-Insulating Ferromagnetic Topological Crystalline Insulator and Its Multicarrier Surface Dirac-Cone Transport

We succeeded in fabricating an ideal, bulk-insulating ferromagnetic topological crystalline insulator by doping Mn to SnTe films grown on Bi_{2}Te_{3}. The cancellation of the polarity of SnTe surface and electron doping due to Bi and Mn leads to an ideal case where only the electron and holes of topological surface Dirac carriers exist at the Fermi level in different region of the surface Brillouin zone and their competition results in a nonlinear Hall effect. Ferromagnetism has been confirmed at 3.5 K through the detection of the anomalous Hall effect. These properties can potentially serve to realize and manipulate the high-Chern number quantum anomalous Hall effect.